Power Switching Transistor YANGJIE YJD80G06CQ N Channel Enhancement Mode with Low Switching Loss and Excellent Stability
Key Attributes
Model Number:
YJD80G06CQ
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
RDS(on):
7.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Output Capacitance(Coss):
670pF
Pd - Power Dissipation:
144W
Input Capacitance(Ciss):
2.1nF
Gate Charge(Qg):
31nC@10V
Mfr. Part #:
YJD80G06CQ
Package:
TO-252
Product Description
Product Overview
The YJD80G06CQ is a N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. It features low RDS(on) & FOM, extremely low switching loss, excellent stability and uniformity, and fast switching with soft recovery. This transistor is suitable for power switching applications, hard switched and high frequency circuits, uninterruptible power supply, DC-DC converters, and 12V and 24V automotive systems. The "Q" suffix indicates AEC-Q101 qualification.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Part Number: YJD80G06CQ
- Certifications: AEC-Q101 qualified (suffix "Q"), RoHS COMPLIANT
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 60 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TC=25°C | 80 | A | ||
| Drain Current | ID | TC =100°C | 50 | A | ||
| Pulsed Drain Current | IDM | 240 | A | |||
| Avalanche energy | EAS | B | 144 | mJ | ||
| Total Power Dissipation | PD | TC=25°C C | 78 | W | ||
| Total Power Dissipation | PD | TC =100°C C | 31 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | °C | ||
| Thermal resistance | ||||||
| Thermal Resistance Junction-to-Ambient Steady-State | RθJA | D | 40 | 50 | °C/W | |
| Thermal Resistance Junction-to-Case Steady-State | RθJC | 1.3 | 1.6 | °C/W | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250μA | 60 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=60V, VGS=0V | 1 | μA | ||
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250μA | 1.2 | 1.7 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | 5.5 | 7.5 | mΩ | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=10A | 6.5 | 10 | mΩ | |
| Diode Forward Voltage | VSD | IS=20A, VGS=0V | 0.85 | 1.3 | V | |
| Maximum Body-Diode Continuous Current | IS | 80 | A | |||
| Gate resistance | RG | f=1MHz | 1.5 | Ω | ||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | 2100 | pF | ||
| Output Capacitance | Coss | VDS=25V, VGS=0V, f=1MHz | 670 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=25V, VGS=0V, f=1MHz | 30 | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=30V, ID=20A | 31 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V, VDS=30V, ID=20A | 6 | nC | ||
| Gate-Drain Charge | Qg | VGS=10V, VDS=30V, ID=20A | 5 | nC | ||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=500A/us | 18 | nC | ||
| Reverse Recovery Time | trr | IF=20A, di/dt=500A/us | 30 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=30V, ID=20A RGEN=3Ω | 10 | ns | ||
| Turn-on Rise Time | tr | VGS=10V, VDD=30V, ID=20A RGEN=3Ω | 34 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V, VDD=30V, ID=20A RGEN=3Ω | 26.2 | ns | ||
| Turn-off fall Time | tf | VGS=10V, VDD=30V, ID=20A RGEN=3Ω | 45 | ns | ||
2410121521_YANGJIE-YJD80G06CQ_C20605729.pdf
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