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quality power mosfet Winsok Semicon WSF35N20 n channel device with low leakage current and high reliability factory
quality power mosfet Winsok Semicon WSF35N20 n channel device with low leakage current and high reliability factory
quality power mosfet Winsok Semicon WSF35N20 n channel device with low leakage current and high reliability factory
quality power mosfet Winsok Semicon WSF35N20 n channel device with low leakage current and high reliability factory

power mosfet Winsok Semicon WSF35N20 n channel device with low leakage current and high reliability

Key Attributes
Model Number: WSF35N20
Product Custom Attributes
Mfr. Part #:
WSF35N20
Package:
TO-252-2L
Product Description

Product Overview

The WSF35N20 is a high-performance SGT N-Channel MOSFET characterized by its extreme cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. It meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval.

Product Attributes

  • Brand: Winsok
  • Certifications: RoHS Compliant, Green Devices Available
  • Testing: 100% UIS + Rg Tested
  • Reliability: Reliable and Rugged

Technical Specifications

ParameterSymbolConditionsMin.Typ.Max.Units
Drain-Source Breakdown VoltageBVDSSVGS=0V , ID=250A200V
Static Drain-Source On-ResistanceRDS ONVGS=10V , ID=20A6065m
Static Drain-Source On-ResistanceRDS ONTJ=125C, VGS=10V , ID=20A7780V
Gate Threshold VoltageVGS thVGS=VDS , ID=250A2.03.04.0V
Drain-Source Leakage CurrentIDSSVDS=200V , VGS=0V1.0A
Drain-Source Leakage CurrentIDSSTJ=55C, VDS=200V , VGS=0V5.0A
Gate-Source Leakage CurrentIGSSVDS=0V , VGS=20V100nA
Forward TransconductancegfsVDS=5V , ID=20A15S
Gate ResistanceRG=1.0MHz1.03.1
Total Gate ChargeQgVDS=160V , VGS=10V , ID=20A50nC
Total Gate ChargeQgVDS=10V34
Gate-Source ChargeQgs16.5
Gate-Drain ChargeQgd23
Turn-On Delay TimeTd onVDS=20V , VGS=10V , RL=1 , RGEN=312.5ns
Rise TimeTrVDS=20V , VGS=10V , RL=1 , RGEN=325
Turn-Off Delay TimeTd offVDS=20V , VGS=10V , RL=1 , RGEN=332
Fall TimeTfVDS=20V , VGS=10V , RL=1 , RGEN=36
Input CapacitanceCissVDS=100V , VGS=0V , =1.0MHz2762pF
Output CapacitanceCossVDS=100V , VGS=0V , =1.0MHz361
Reverse Transfer CapacitanceCrssVDS=100V , VGS=0V , =1.0MHz53
Continuous Source CurrentIS35A
Diode Forward VoltageVSDVGS=0V , IS=1A1.4V
Reverse Recovery TimetrrIF=20A , di/dt=500A/s233ns
Reverse Recovery ChargeQrrIF=20A , di/dt=500A/s2.1nC
Drain-Source VoltageVDS200V
Gate-Source VoltageVGS20V
Continuous Drain CurrentIDTC=25C35A
Continuous Drain CurrentIDTC=100C20A
Pulse Drain CurrentIDM140A
Power DissipationPDTC=25C150W
Power DissipationPDTC=100C62W
Single pulse Avalanche CurrentIAS20A
Single pulse Avalanche EnergyEASL=0.5mH360mJ
Storage Temperature RangeTSTG-55150C
Operating Junction Temperature RangeTJ-55150C
Thermal Resistance-Junction to AmbientRJAt10s31C/W
Thermal Resistance-Junction to AmbientRJASteady State62.5C/W
Thermal Resistance-Junction to CaseRJC0.83C/W

2510131755_Winsok-Semicon-WSF35N20_C52034119.pdf

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