Power Load Triacs WEIDA BT134-800D Featuring 4A RMS On State Current and Low Latching Current
Key Attributes
Model Number:
BT134-800D
Product Custom Attributes
Holding Current (Ih):
20mA
Current - Gate Trigger(Igt):
25mA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
500mW
Current - On State(It(RMS)):
2A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
25A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BT134-800D
Package:
SOT-223-3L
Product Description
Product Overview
The Jiangsu Weida Semiconductor BT134 Series 4A Triacs are designed for middle and small resistance type power load applications. They are recommended for their low holding and latching current characteristics.
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Product Series: BT134 Series
- Product Type: Triacs
- Current Rating: 4A
- Revision: Rev.4.0
- Year: 2020
Technical Specifications
| Parameter | Symbol | Value | Unit | Test Condition | Quadrants |
| Repetitive peak off-state voltage | VDRM | 600/800 | V | Tj=25 | |
| Repetitive peak reverse voltage | VRRM | 600/800 | V | Tj=25 | |
| RMS on-state current | IT(RMS) | 4 | A | ||
| Non repetitive surge peak on-state current | ITSM | 25 | A | full cycle, F=50Hz | |
| I2t value for fusing | I2t | 3.1 | A2s | tp=10ms | |
| Critical rate of rise of on-state current | dI/dt | 50 | A/s | IG=2IGT | -- |
| Critical rate of rise of on-state current | dI/dt | 10 | A/s | IG=2IGT | |
| Peak gate current | IGM | 2 | A | ||
| Average gate power dissipation | PG(AV) | 0.5 | W | ||
| Peak gate power | PGM | 5 | W | ||
| Gate Trigger Current | IGT | MAX 5/10/25 | mA | VD=12V, RL=33 | --/ |
| Gate Trigger Voltage | VGT | 1.3 | V | --- | |
| Gate Open Voltage | VGD | MIN 0.2 | V | VD=VDRM | --- |
| Holding Current | IH | MAX 5/10/20 | mA | IT=100mA | -- |
| Holding Current | IH | MAX 12/15/35 | mA | IT=100mA | |
| Latching Current | IL | MAX 8/10/20 | mA | IG=1.2IGT | -- |
| Latching Current | IL | MAX 12/15/35 | mA | IG=1.2IGT | |
| Critical rate of rise of off-state voltage | dV/dt | MIN 10/20/50 | V/s | VD=0.66VDRM Tj=125 Gate open | |
| On-state voltage | VTM | MAX 1.7 | V | ITM=5A tp=380s Tj=25 | |
| Off-state current | IDRM | MAX 5 | A | VDRM Tj=25 | |
| Off-state current | IDRM | 0.5 | mA | VDRM Tj=125 | |
| Reverse leakage current | IRRM | MAX 5 | A | VRRM Tj=25 | |
| Reverse leakage current | IRRM | 0.5 | mA | VRRM Tj=125 | |
| Storage junction temperature range | Tstg | -40~150 | |||
| Operating junction temperature range | Tj | -40~125 |
2410122027_WEIDA-BT134-800D_C2901127.pdf
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