N Channel MOSFET Winsok Semicon WSR110N20 with 110A Continuous Drain Current and RoHS Certification
Key Attributes
Model Number:
WSR110N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
110A
RDS(on):
12mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF
Output Capacitance(Coss):
390pF
Pd - Power Dissipation:
166.7W
Input Capacitance(Ciss):
10.7nF
Gate Charge(Qg):
146nC@10V
Mfr. Part #:
WSR110N20
Package:
TO-220-3L
Product Description
Product Overview
The WSR110N20 is a high-performance N-Channel MOSFET featuring an advanced trench technology with extreme high cell density. This design offers excellent RDS(ON) and gate charge characteristics, making it suitable for battery protection and other switching applications. The WSR110N20 meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability approval.
Product Attributes
- Brand: Winsok
- Origin: Taiwan (implied by www.winsok.tw)
- Certifications: RoHS, Green Product
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings | VDS Drain-Source Voltage | 200 | V | |||
| VGS Gate-Source Voltage | ±20 | V | ||||
| ID@TC=25 Continuous Drain Current, VGS @ 10V3 | 110 | A | ||||
| ID@TC=100 Continuous Drain Current, VGS @ 10V3 | 49 | A | ||||
| IDM Pulsed Drain Current2,TC=25C | 332 | A | ||||
| PD@TC=25 Total Power Dissipation | 166.7 | W | ||||
| Storage & Operating Temperature | TSTG Storage Temperature Range | -55 | 150 | |||
| TJ Operating Junction Temperature Range | -55 | 150 | ||||
| Thermal Resistance Ratings | RJA Thermal Resistance Junction-Ambient | TA = 25C (1) | --- | 62.5 | /W | |
| RJC Thermal Resistance Junction-Case | --- | 0.75 | /W | |||
| Electrical Characteristics | BVDSS Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 200 | --- | --- | V |
| RDS(ON) Static Drain-Source On-Resistance | VGS=10V,ID=30A | --- | 9.2 | m | ||
| VGS(th) Gate Threshold Voltage | VGS=VDS , ID =250uA | 2.0 | 3.0 | 4.0 | V | |
| IDSS Drain-Source Leakage Current | VDS=160V , VGS=0V , TJ=25 | 1 | --- | uA | ||
| IGSS Gate-Source Leakage Current | VGS=±20V , VDS=0V | --- | ±100 | nA | ||
| Qg Total Gate Charge | VDS=100V , VGS=10V , ID=55A | --- | 146 | --- | nC | |
| Td(on) Turn-On Delay Time | DD=100V , ID =55A , RG=4.7 , VGS =10V | --- | 22 | --- | ns | |
| Capacitance | Ciss Input Capacitance | VDS=50V , VGS=0V , f=1MHz | 10700 | --- | pF | |
| Coss Output Capacitance | --- | 390 | --- | pF | ||
| Crss Reverse Transfer Capacitance | --- | 70 | --- | pF | ||
| Diode Characteristics | IS Continuous Source Current | VG=VD=0V , Force Current | --- | 83 | A | |
| VSD Diode Forward Voltage | VGS=0V , IS=1A , TJ=25 | --- | 1.2 | V |
2409302330_Winsok-Semicon-WSR110N20_C22751513.pdf
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