Power Switching Transistor YANGJIE YJG40G10A with Split Gate Trench and High Current Capability
Key Attributes
Model Number:
YJG40G10A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
40A
RDS(on):
21.5mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Output Capacitance(Coss):
399pF
Input Capacitance(Ciss):
1.051nF
Pd - Power Dissipation:
81W
Gate Charge(Qg):
16nC@10V
Mfr. Part #:
YJG40G10A
Package:
PDFN5060-8L
Product Description
Product Overview
The YJG40G10A is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. It features split gate trench MOSFET technology, an excellent package for heat dissipation, and a high-density cell design for low RDS(ON). This transistor is designed for power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJG40G10A
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 100 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=100V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.0 | 1.8 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | 14 | 17.5 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=20A | 17 | 21.5 | m | |
| Diode Forward Voltage | VSD | IS=20A,VGS=0V | 1.3 | V | ||
| Maximum Body-Diode Continuous Current | IS | 40 | A | |||
| Gate resistance | RG | f=1MHz, Open drain | 1 | |||
| Input Capacitance | Ciss | VDS=-50V,VGS=0V,f=1MHZ | 1051 | pF | ||
| Output Capacitance | Coss | VDS=-50V,VGS=0V,f=1MHZ | 399 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=-50V,VGS=0V,f=1MHZ | 18 | pF | ||
| Total Gate Charge | Qg | VGS=10V,VDS=50V,ID=25A | 16 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V,VDS=50V,ID=25A | 5.6 | nC | ||
| Gate-Drain Charge | Qg d | VGS=10V,VDS=50V,ID=25A | 2.4 | nC | ||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=100A/us | 42 | nC | ||
| Reverse Recovery Time | trr | IF=20A, di/dt=100A/us | 39.8 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V,VDD=50V,IDS=25A RGEN=2.2 | 39.2 | ns | ||
| Turn-on Rise Time | tr | VGS=10V,VDD=50V,IDS=25A RGEN=2.2 | 11 | ns | ||
| Turn-off Delay Time | tD(off) | VGS=10V,VDD=50V,IDS=25A RGEN=2.2 | 53.2 | ns | ||
| Turn-off fall Time | tf | VGS=10V,VDD=50V,IDS=25A RGEN=2.2 | 15.8 | ns | ||
| Drain-source Voltage | VDS | 100 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | Tc=25 | 40 | A | ||
| Drain Current | ID | Tc=100 | 25.3 | A | ||
| Pulsed Drain Current | IDM | 160 | A | |||
| Avalanche energy | EAS | 81 | mJ | |||
| Total Power Dissipation | PD | Tc=25 | 60 | W | ||
| Total Power Dissipation | PD | Tc=100 | 24 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Thermal Resistance Junction-to-Ambient | RJA | D t10S | 15 | 20 | /W | |
| Thermal Resistance Junction-to-Ambient | RJA | D Steady-State | 40 | 50 | /W | |
| Thermal Resistance Junction-to-Case | RJC | Steady-State | 1.7 | 2.1 | /W |
2410121455_YANGJIE-YJG40G10A_C2908523.pdf
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