Industrial Triac WEIDA BTB04-600BW Featuring 4 Amp RMS Current and 600 Volt Repetitive Peak Voltage
Key Attributes
Model Number:
BTB04-600BW
Product Custom Attributes
Holding Current (Ih):
60mA
Current - Gate Trigger(Igt):
50mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
40A
SCR Type:
-
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BTB04-600BW
Package:
TO-252
Product Description
Jiangsu Weida Semiconductor Co., Ltd. BTA04/BTB04 Series 4A Triacs
The BTA04/BTB04 series triacs from Jiangsu Weida Semiconductor Co., Ltd. are designed for high shock loading capability with a large current capacity. They offer a high dv/dt rate with strong resistance to electromagnetic interference and excellent commutation performance. These 3-quadrant devices are particularly recommended for inductive loads. The BTA04 series provides a rated insulation voltage of 2500 VRMS, complying with UL standards (File ref: E516503), with all three terminals isolated from the heatsink.
Product Attributes
- Brand: Jiangsu Weida Semiconductor Co., Ltd.
- Product Series: BTA04/BTB04 Series
- Certifications: UL (File ref: E516503)
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
| RMS On-State Current | IT(RMS) | 4 | A | |
| Repetitive Peak Off-State Voltage | VDRM | 600/800 | V | (Tj=25) |
| Repetitive Peak Reverse Voltage | VRRM | 600/800 | V | (Tj=25) |
| Non-Repetitive Surge Peak On-State Current | ITSM | 40 | A | (full cycle, F=50Hz) |
| I2t Value for Fusing | I2t | 8 | As | (tp=10ms) |
| Critical Rate of Rise of On-State Current | dI/dt | 50 | A/s | (IG=2IGT) |
| Peak Gate Current | IGM | 4 | A | |
| Average Gate Power Dissipation | PG(AV) | 1 | W | |
| Peak Gate Power | PGM | 5 | W | |
| Storage Junction Temperature Range | Tstg | -40~150 | ||
| Operating Junction Temperature Range | Tj | -40~125 | ||
| On-State Voltage (Max) | VTM | 1.5 | V | (ITM=5.5A, tp=380s, Tj=25) |
| Off-State Current (Max) | IDRM/IRRM | 5 | A | (VDRM=VRRM, Tj=25) |
| Off-State Current (Max) | IDRM/IRRM | 0.5 | mA | (VDRM=VRRM, Tj=125) |
| Junction to Case Thermal Resistance (AC) | Rth(j-c) | 2.5-3.4 | /W | (Package dependent: TO-220B, TO-220A, TO-220F) |
| Junction to Case Thermal Resistance (AC) | Rth(j-c) | 2.8 | /W | (TO-251-4R/TO-252-4R) |
Electrical Characteristics (Tj=25 unless otherwise specified)
3 Quadrants
| Parameter | Test Condition | Quadrant | Value | Unit |
| Gate Trigger Current | VD=12V, RL=33 | -- | MAX 5 | mA |
| Gate Trigger Current | VD=12V, RL=33 | TW | MAX 10 | mA |
| Gate Trigger Current | VD=12V, RL=33 | SW | MAX 35 | mA |
| Gate Trigger Current | VD=12V, RL=33 | CW | MAX 50 | mA |
| Gate Trigger Current | VD=12V, RL=33 | BW | MAX 50 | mA |
| Gate Trigger Voltage | -- | 1.5 | V | |
| Gate Non-Trigger Voltage | VD=VDRM | -- | MIN 0.2 | V |
| Holding Current | IT=100mA | MAX 6 | mA | |
| Holding Current | IT=100mA | TW | MAX 10 | mA |
| Holding Current | IT=100mA | SW | MAX 35 | mA |
| Holding Current | IT=100mA | CW | MAX 60 | mA |
| Holding Current | IT=100mA | BW | MAX 50 | mA |
| Latching Current | IG=1.2IGT | - | MAX 10 | mA |
| Latching Current | IG=1.2IGT | MAX 15 | mA | |
| Latching Current | IG=1.2IGT | TW | MAX 15 | mA |
| Latching Current | IG=1.2IGT | SW | MAX 50 | mA |
| Latching Current | IG=1.2IGT | CW | MAX 70 | mA |
| Latching Current | IG=1.2IGT | BW | MAX 80 | mA |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | MIN 50 | V/s | |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | TW | MIN 100 | V/s |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | SW | MIN 500 | V/s |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | CW | MIN 1000 | V/s |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | BW | MIN 1000 | V/s |
4 Quadrants
| Parameter | Test Condition | Quadrant | Value | Unit |
| Gate Trigger Current | VD=12V, RL=33 | -- | MAX 25 | mA |
| Gate Trigger Current | VD=12V, RL=33 | C | MAX 50 | mA |
| Gate Trigger Current | VD=12V, RL=33 | B | MAX 70 | mA |
| Gate Trigger Voltage | ALL | 1.5 | V | |
| Gate Non-Trigger Voltage | VD=VDRM | ALL | MIN 0.2 | V |
| Holding Current | IT=100mA | MAX 40 | mA | |
| Holding Current | C | MAX 60 | mA | |
| Holding Current | B | MAX 90 | mA | |
| Latching Current | IG=1.2IGT | -- | MAX 50 | mA |
| Latching Current | IG=1.2IGT | C | MAX 70 | mA |
| Latching Current | IG=1.2IGT | B | MAX 90 | mA |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | MIN 200 | V/s | |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | C | MIN 500 | V/s |
| Critical Rate of Rise of Off-State Voltage | VD=2/3VDRM, Tj=125, Gate open | B | MIN 500 | V/s |
2410122027_WEIDA-BTB04-600BW_C2901054.pdf
Related Products
Planar die Zener diode XZT BZT52C7V5 designed for medium current applications and automated assembly
Product OverviewThe BZT52C2V4 thru BZT52C43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free version.Product ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
RoHS Compliant NPN Amplifier YANGJIE S8050-H with Epoxy Casing and Collector Power Dissipation 300mW
Product OverviewThe S8050-L through S8050-H series are NPN general-purpose amplifiers manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. These components are designed for general amplification applications and feature an epoxy casing that meets UL-94 V-0 flammability rating. Halogen...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
