TOSHIBA GT30N135SRA S1E Discrete IGBT Designed for Soft Switching Applications and Induction Cooktop
Key Attributes
Model Number:
GT30N135SRA,S1E
Product Custom Attributes
Td(off):
-
Pd - Power Dissipation:
348W
Operating Temperature:
-
Td(on):
-
Collector-Emitter Breakdown Voltage (Vces):
1.35kV
IGBT Type:
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
-
Gate Charge(Qg):
270nC
Switching Energy(Eoff):
1.3mJ
Turn-On Energy (Eon):
-
Mfr. Part #:
GT30N135SRA,S1E
Package:
TO-247
Product Description
Product Overview
The GT30N135SRA is a discrete Silicon N-Channel IGBT designed for voltage-resonant inverter switching, soft switching applications, and induction cooktops and home appliances. This 6.5th generation RC-IGBT integrates a freewheeling diode (FWD) monolithically. It offers high-speed switching with a typical IGBT fall time of 0.25 s and a low saturation voltage of 1.65 V (typ.). The device supports a high junction temperature of 175 C (max) and is sensitive to electrostatic discharge.
Product Attributes
- Brand: Toshiba
- Product Type: Discrete IGBT
- Channel Type: N-Channel
- Generation: 6.5th generation
- Certifications: RoHS Compatible
Technical Specifications
| Characteristics | Symbol | Rating | Unit | Test Condition |
| Absolute Maximum Ratings | ||||
| Collector-emitter voltage | VCES | 1350 | V | (Tc = 25 ) |
| Gate-emitter voltage | VGES | 25 | V | |
| Collector current (DC) | IC | 60 | A | (Tc = 100 ) |
| Collector current (1 ms) | ICP | 120 | A | (Tc = 25 ) |
| Non-repetitive peak collector current | ICSM | 260 | A | (Tc = 100 ) |
| Diode forward current (DC) | IF | 60 | A | (Note 2) (Tc = 25 ) |
| Diode forward current (100 s) | IFP | 120 | A | (Note 2) (Tc = 100 ) |
| Collector power dissipation | PC | 348 | W | (Note 1) |
| Junction temperature | Tj | 175 | (max) | |
| Storage temperature | Tstg | -55 to 175 | ||
| Mounting torque | TOR | 0.8 | N m | |
| Thermal Characteristics | ||||
| Junction-to-case thermal resistance | Rth(j-c) | 0.43 | /W | |
| Static Characteristics | ||||
| Gate leakage current | IGES | 100 | nA | VGE = 25 V, VCE = 0 V |
| Collector cut-off current | ICES | 100 | A | VCE = 1350 V, VGE = 0 V |
| Collector-emitter breakdown voltage | V(BR)CES | 1350 | V | IC = 0.5 mA, VGE = 0 V |
| Gate-emitter cut-off voltage | VGE(OFF) | 5.3 | V | IC = 60 mA, VCE = 5 V |
| Collector-emitter saturation voltage | VCE(sat)(1) | 1.65 | V | IC = 30 A, VGE = 15 V (pulse test) |
| Collector-emitter saturation voltage | VCE(sat)(2) | 1.90 | V | IC = 30 A, VGE = 15 V, Tc = 125 (pulse test) |
| Collector-emitter saturation voltage | VCE(sat)(3) | 2.15 | V | IC = 60 A, VGE = 15 V (pulse test) |
| Collector-emitter saturation voltage | VCE(sat)(4) | 2.60 | V | IC = 60 A, VGE = 15 V, Tc = 125 (pulse test) |
| Diode forward voltage | VF(1) | 1.75 | V | IF = 30 A, VGE = 0 V (pulse test) |
| Diode forward voltage | VF(2) | 1.85 | V | IF = 30 A, VGE = 0 V, Tc = 125 (pulse test) |
| Dynamic Characteristics | ||||
| Input capacitance | Cies | 3700 | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz |
| Reverse transfer capacitance | Cres | 40 | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz |
| Output capacitance | Coes | 55 | pF | VCE = 25 V, VGE = 0 V, f = 100 kHz |
| Total gate charge | Qg | 270 | nC | VCE = 600 V, IC = 60 A, VGE = 15 V |
| Switching time (rise time) | tr | 0.14 | s | Resistive load |
| Switching time (turn-on time) | ton | 0.21 | s | Resistive load |
| Switching time (fall time) | tf | 0.25 | s | VCE = 600 V, IC = 60 A, VGE = +15 V, RG = 10 |
| Switching time (turn-off time) | toff | 0.50 | s | VCE = 600 V, IC = 60 A, VGE = +15 V, RG = 10 |
| Switching loss (turn-off switching loss) | Eoff(1) | 0.80 | mJ | Inductive load VCE = 300 V, IC = 60 A, VGE = +15 V, RG = 39 , L = 30 H, C = 0.33 F |
| Switching loss (turn-off switching loss) | Eoff(2) | 1.30 | mJ | Tc = 125 Inductive load VCE = 300 V, IC = 60 A, VGE = +15 V, RG = 39 , L = 30 H, C = 0.33 F |
2310271851_TOSHIBA-GT30N135SRA-S1E_C17181813.pdf
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