IGBT module YANGJIE MG200HF12TFC2 featuring low switching losses and high short circuit capability

Key Attributes
Model Number: MG200HF12TFC2
Product Custom Attributes
Mfr. Part #:
MG200HF12TFC2
Package:
C2
Product Description

Product Overview

The MG200HF12TFC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS systems, and welding machines. It features low Vce(sat) with Trench technology, low switching losses, a positive temperature coefficient for Vce(sat), and high short-circuit capability. The module includes an ultra-fast and soft recovery anti-parallel FWD, a low inductance package, and a maximum junction temperature of 175.

Product Attributes

  • Brand: Yangjie
  • Certifications: RoHS Compliant

Technical Specifications

ParameterSymbolConditionsValueUnit
IGBT Absolute Maximum Ratings
Collector-Emitter VoltageVCESVGE=0V, IC =1mA, Tvj=251200V
Continuous Collector CurrentICTc=100200A
Repetitive Peak Collector CurrentICRMtp=1ms400A
Gate-Emitter VoltageVGESTvj=25±20V
Total Power DissipationPtotTc=25, Tvjmax=1751250W
IGBT Characteristic Values
Gate-emitter Threshold VoltageVGE(th)VGE=VCE, IC =7.6mA,Tvj=255.0, 5.8, 6.6V
Collector-Emitter Cut-off CurrentICESVCE=1200V,VGE=0V,Tvj=251.0mA
Collector-Emitter Saturation VoltageVCE(sat)Ic=200A,VGE=15V, Tvj=252.10, 2.40V
Collector-Emitter Saturation VoltageVCE(sat)Ic=200A,VGE=15V, Tvj=1252.45V
Gate ChargeQG1.2uC
Input CapacitanceCiesVCE=25V, VGE =0V, f=1MHz,Tvj=2512.8nF
Reverse Transfer CapacitanceCres0.5nF
Gate-Emitter leakage currentIGESVCE=0 V, VGE=20V,Tvj = 25400nA
Turn-on Delay Timetd(on)IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=25290ns
Rise TimetrIC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=2550ns
Turn-off Delay Timetd(off)IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=25330ns
Fall TimetfIC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=2572ns
Energy Dissipation During Turn-on TimeEonIC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=2512.4mJ
Energy Dissipation During Turn-off TimeEoffIC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=259.4mJ
Turn-on Delay Timetd(on)IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=125340ns
Rise TimetrIC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=12560ns
Turn-off Delay Timetd(off)IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=125460ns
Fall TimetfIC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=12575ns
Energy Dissipation During Turn-on TimeEonIC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=12518.0mJ
Energy Dissipation During Turn-off TimeEoffIC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=12514.2mJ
SC DataIscTp≤10us,VGE=15V, Tvj=150,Vcc=900V, VCEM≤1200V1100A
Diode Absolute Maximum Ratings
Repetitive Peak Reverse VoltageVRRMTvj=251200V
Continuous DC Forward CurrentIF200A
Repetitive Peak Forward CurrentIFRMtp=1ms400A
Diode Characteristic Values
Forward VoltageVFIF=200A,Tvj=252.10, 2.60V
Forward VoltageVFIF=200A,Tvj=1252.10V
Recovered ChargeQrrIF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=2514.2uC
Peak Reverse Recovery CurrentIrrIF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=25155A
Reverse Recovery EnergyErecIF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=259.0mJ
Recovered ChargeQrrIF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=12527.5uC
Peak Reverse Recovery CurrentIrrIF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=125176A
Reverse Recovery EnergyErecIF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=12513.8mJ
Module Characteristics
Isolation voltageVisolt=1min,f=50Hz2500V
Maximum Junction TemperatureTjmax175
Operating Junction TemperatureTvj op-40, 150
Storage TemperatureTstg-40, 125
Thermal Resistance Junction-to CaseRJCper IGBT0.12K/W
Thermal Resistance Junction-to CaseRJCper Diode0.20K/W
Thermal Resistance Case-to SinkRCSConductive grease applied0.046K/W
Module Electrodes TorqueMtRecommended(M6)3.0, 5.0N·m
Module-to-Sink TorqueMsRecommended(M6)3.0, 5.0N·m
Weight of ModuleG315g

2411220012_YANGJIE-MG200HF12TFC2_C20602001.pdf

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