IGBT module YANGJIE MG200HF12TFC2 featuring low switching losses and high short circuit capability
Product Overview
The MG200HF12TFC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS systems, and welding machines. It features low Vce(sat) with Trench technology, low switching losses, a positive temperature coefficient for Vce(sat), and high short-circuit capability. The module includes an ultra-fast and soft recovery anti-parallel FWD, a low inductance package, and a maximum junction temperature of 175.
Product Attributes
- Brand: Yangjie
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| IGBT Absolute Maximum Ratings | ||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | Tc=100 | 200 | A |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 400 | A |
| Gate-Emitter Voltage | VGES | Tvj=25 | ±20 | V |
| Total Power Dissipation | Ptot | Tc=25, Tvjmax=175 | 1250 | W |
| IGBT Characteristic Values | ||||
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =7.6mA,Tvj=25 | 5.0, 5.8, 6.6 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V,Tvj=25 | 1.0 | mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | Ic=200A,VGE=15V, Tvj=25 | 2.10, 2.40 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | Ic=200A,VGE=15V, Tvj=125 | 2.45 | V |
| Gate Charge | QG | 1.2 | uC | |
| Input Capacitance | Cies | VCE=25V, VGE =0V, f=1MHz,Tvj=25 | 12.8 | nF |
| Reverse Transfer Capacitance | Cres | 0.5 | nF | |
| Gate-Emitter leakage current | IGES | VCE=0 V, VGE=20V,Tvj = 25 | 400 | nA |
| Turn-on Delay Time | td(on) | IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=25 | 290 | ns |
| Rise Time | tr | IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=25 | 50 | ns |
| Turn-off Delay Time | td(off) | IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=25 | 330 | ns |
| Fall Time | tf | IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=25 | 72 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=25 | 12.4 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=25 | 9.4 | mJ |
| Turn-on Delay Time | td(on) | IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=125 | 340 | ns |
| Rise Time | tr | IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=125 | 60 | ns |
| Turn-off Delay Time | td(off) | IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=125 | 460 | ns |
| Fall Time | tf | IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=125 | 75 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=125 | 18.0 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC =200 A, VCE = 600 V, VGE = ± 15V, RG =3.3Ω, Tvj=125 | 14.2 | mJ |
| SC Data | Isc | Tp≤10us,VGE=15V, Tvj=150,Vcc=900V, VCEM≤1200V | 1100 | A |
| Diode Absolute Maximum Ratings | ||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | 200 | A | |
| Repetitive Peak Forward Current | IFRM | tp=1ms | 400 | A |
| Diode Characteristic Values | ||||
| Forward Voltage | VF | IF=200A,Tvj=25 | 2.10, 2.60 | V |
| Forward Voltage | VF | IF=200A,Tvj=125 | 2.10 | V |
| Recovered Charge | Qrr | IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=25 | 14.2 | uC |
| Peak Reverse Recovery Current | Irr | IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=25 | 155 | A |
| Reverse Recovery Energy | Erec | IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=25 | 9.0 | mJ |
| Recovered Charge | Qrr | IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=125 | 27.5 | uC |
| Peak Reverse Recovery Current | Irr | IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=125 | 176 | A |
| Reverse Recovery Energy | Erec | IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=125 | 13.8 | mJ |
| Module Characteristics | ||||
| Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V |
| Maximum Junction Temperature | Tjmax | 175 | ||
| Operating Junction Temperature | Tvj op | -40, 150 | ||
| Storage Temperature | Tstg | -40, 125 | ||
| Thermal Resistance Junction-to Case | RJC | per IGBT | 0.12 | K/W |
| Thermal Resistance Junction-to Case | RJC | per Diode | 0.20 | K/W |
| Thermal Resistance Case-to Sink | RCS | Conductive grease applied | 0.046 | K/W |
| Module Electrodes Torque | Mt | Recommended(M6) | 3.0, 5.0 | N·m |
| Module-to-Sink Torque | Ms | Recommended(M6) | 3.0, 5.0 | N·m |
| Weight of Module | G | 315 | g | |
2411220012_YANGJIE-MG200HF12TFC2_C20602001.pdf
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