switching IGBT transistor YANGJIE DGW20N65CTL0 designed for in soft switching and air conditioning units
Key Attributes
Model Number:
DGW20N65CTL0
Product Custom Attributes
Pd - Power Dissipation:
120W
Td(off):
68ns
Td(on):
12ns
Operating Temperature:
-40℃~+175℃
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
0.01nF
Input Capacitance(Cies):
900pF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@1mA
Pulsed Current- Forward(Ifm):
60A
Output Capacitance(Coes):
0.04nF
Switching Energy(Eoff):
220uJ
Turn-On Energy (Eon):
410uJ
Mfr. Part #:
DGW20N65CTL0
Package:
TO-247
Product Description
Product Overview
The DGW20N65CTL0 is a high-speed, smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for use in soft switching applications, air conditioning systems, and motor drive inverters.
Product Attributes
- Brand: 21yangjie
- Certifications: RoHS
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| IGBT Discrete Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | |||
| Collector Current, limited by Tjmax | IC | TC= 25C | 40 | A | ||
| Collector Current, limited by Tjmax | IC | TC= 100C | 20 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 25C | 40 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 100C | 20 | A | ||
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |||
| Transient Gate-Emitter Voltage | VGE | (tp10s,D<0.010) | 30 | V | ||
| Turn off Safe Operating Area | VCE600V, Tj 150C | 60 | A | |||
| Pulsed Collector Current | ICM | VGE=15V, tp limited by Tjmax | 60 | A | ||
| Short Circuit Withstand Time | Tsc | VGE= 15V, VCE 400V | 5 | s | ||
| Diode Pulsed Current | IFpuls | tp limited by Tjmax | 60 | A | ||
| Power Dissipation | Ptot | Tj=175C,Tc=25C | 120 | W | ||
| Electrical Characteristics of the IGBT | ||||||
| Static Collector-Emitter Breakdown Voltage | BVCES | VGE=0V, IC=250A | 650 | - | - | V |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=1mA | 5.0 | 5.8 | 6.5 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=20A, Tj=25C | 1.60 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=20A, Tj=125C | 1.75 | 1.80 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=20A, Tj=150C | 1.95 | V | ||
| Zero Gate Voltage Collector Current | ICES | VCE=600V, VGE=0V, Tj= 25C | 0.25 | mA | ||
| Zero Gate Voltage Collector Current | ICES | VCE=600V, VGE=0V, Tj=150C | 1.00 | mA | ||
| Gate-Emitter Leakage Current | IGES | VCE= 0V, VGE= 20V | 200 | nA | ||
| Input Capacitance | Cies | VCE= 25V, VGE= 0V, f = 1MHz | 0.90 | nF | ||
| Output Capacitance | Coes | 0.04 | nF | |||
| Reverse Transfer Capacitance | Cres | 0.01 | nF | |||
| Gate Charge | QG | VCC=300V,IC=20A, VGE=15V | 0.085 | uC | ||
| Short circuit collector current | ICSC | VGE=15V,tSC5us, VCC=400V, Tj,start=25C | 115 | A | ||
| Operating Junction Temperature | Tj | -40 | +175 | C | ||
| Storage Temperature | Ts | -55 | +150 | C | ||
| Soldering Temperature | wave soldering 1.6mm from case for 10s | 260 | C | |||
| Electrical Characteristics of the Diode | ||||||
| Diode Forward Voltage | VF | IF=20A, Tj= 25C | 2.00 | 2.50 | V | |
| Diode Forward Voltage | VF | IF=20A, Tj= 125C | 1.80 | V | ||
| Diode Forward Voltage | VF | IF=20A, Tj= 150C | 1.70 | V | ||
| Switching Characteristic, Inductive Load (IGBT) | ||||||
| Turn-on Delay Time | td(on) | Tj=25C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 12 | ns | ||
| Rise Time | tr | Tj=25C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 33 | ns | ||
| Turn-on Energy | Eon | Tj=25C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 0.41 | mJ | ||
| Turn-off Delay Time | td(off) | Tj=25C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 68 | ns | ||
| Fall Time | tf | Tj=25C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 129 | ns | ||
| Turn-off Energy | Eoff | Tj=25C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 0.22 | mJ | ||
| Turn-on Delay Time | td(on) | Tj=125C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 16 | ns | ||
| Rise Time | tr | Tj=125C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 41 | ns | ||
| Turn-on Energy | Eon | Tj=125C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 0.48 | mJ | ||
| Turn-off Delay Time | td(off) | Tj=125C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 69 | ns | ||
| Fall Time | tf | Tj=125C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 154 | ns | ||
| Turn-off Energy | Eoff | Tj=125C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 0.35 | mJ | ||
| Turn-on Delay Time | td(on) | Tj=150C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 18 | ns | ||
| Rise Time | tr | Tj=150C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 49 | ns | ||
| Turn-on Energy | Eon | Tj=150C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 0.52 | mJ | ||
| Turn-off Delay Time | td(off) | Tj=150C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 69 | ns | ||
| Fall Time | tf | Tj=150C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 173 | ns | ||
| Turn-off Energy | Eoff | Tj=150C, VCC= 300V, IC=20A, VGE=-5V~15V, Rg=51 | 0.38 | mJ | ||
| Electrical Characteristics of the DIODE | ||||||
| Reverse Recovery Current | Irr | IF=20A, VR=300V, -di/dt= 500A/s, Tj= 25 | 11 | A | ||
| Reverse Recovery Charge | Qrr | IF=20A, VR=300V, -di/dt= 500A/s, Tj= 25 | 0.20 | uC | ||
| Reverse Recovery Energy | Erec | IF=20A, VR=300V, -di/dt= 500A/s, Tj= 25 | 0.07 | mJ | ||
| Reverse Recovery Current | Irr | IF=20A, VR=300V, -di/dt=500A/s, Tj= 125 | 14 | A | ||
| Reverse Recovery Charge | Qrr | IF=20A, VR=300V, -di/dt=500A/s, Tj= 125 | 0.75 | uC | ||
| Reverse Recovery Energy | Erec | IF=20A, VR=300V, -di/dt=500A/s, Tj= 125 | 0.20 | mJ | ||
| Reverse Recovery Current | Irr | IF=20A, VR=300V, -di/dt= 500A/s, Tj= 150 | 16 | A | ||
| Reverse Recovery Charge | Qrr | IF=20A, VR=300V, -di/dt= 500A/s, Tj= 150 | 0.86 | uC | ||
| Reverse Recovery Energy | Erec | IF=20A, VR=300V, -di/dt= 500A/s, Tj= 150 | 0.25 | mJ | ||
| Thermal Resistance | ||||||
| IGBT Thermal Resistance, Junction - Case | Rth(j-c) | 1.25 | K/W | |||
| Diode Thermal Resistance, Junction - Case | Rth(j-c) | 1.5 | K/W | |||
| Thermal Resistance, Junction - Ambient | Rth(j-a) | 60 | K/W | |||
2411220011_YANGJIE-DGW20N65CTL0_C20600420.pdf
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