IGBT module YANGJIE MG150HF12LEC2 featuring low switching losses and high short circuit capability for industrial
Key Attributes
Model Number:
MG150HF12LEC2
Product Custom Attributes
Pd - Power Dissipation:
960W
Td(off):
390ns
Operating Temperature:
-40℃~+125℃
Td(on):
133ns
Collector-Emitter Breakdown Voltage (Vces):
1.2kV
Reverse Transfer Capacitance (Cres):
0.6nF
Input Capacitance(Cies):
9.8nF
IGBT Type:
NPT (Non-Punch Through)
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5V@6mA
Gate Charge(Qg):
2.86uC
Pulsed Current- Forward(Ifm):
300A
Switching Energy(Eoff):
5.1mJ
Turn-On Energy (Eon):
23.3mJ
Mfr. Part #:
MG150HF12LEC2
Product Description
Product Overview
The MG150HF12LEC2 S-M338 is a high-speed IGBT module featuring NPT technology, designed for applications requiring high frequency drivers, solar inverters, UPS, and electric welding machines. It offers low switching losses, high short circuit capability, and includes an ultra-fast & soft recovery anti-parallel FWD. The module boasts low inductance and a maximum junction temperature of 150.
Product Attributes
- Brand: Yangjie
- Certifications: RoHS Compliant
- Origin: China (implied by website)
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| IGBT Absolute Maximum Ratings | ||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | Tc=80 | 150 | A |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 300 | A |
| Gate-Emitter Voltage | VGES | Tvj=25 | 20 | V |
| Total Power Dissipation | Ptot | Tc=25, Tvjmax=150 | 960 | W |
| IGBT Characteristic Values | ||||
| Gate-Emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =6mA,Tvj=25 | 5.0 - 6.5 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V,Tvj=25 | 1.0 | mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=150A,VGE=15V, Tvj=25 | 3.4 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=150A,VGE=15V, Tvj=125 | 3.9 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=150A,VGE=15V, Tvj=150 | 4.15 | V |
| Gate Charge | QG | 2.86 | uC | |
| Input Capacitance | Cies | VCE=25V,VGE=0V, f=1MHz,Tvj=25 | 9.8 | nF |
| Reverse Transfer Capacitance | Cres | 0.6 | nF | |
| Gate-Emitter leakage current | IGES | VCE=0V, VGE=20V,Tvj=25 | 400 | nA |
| Turn-on Delay Time | td(on) | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=25 | 137 | ns |
| Rise Time | tr | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=25 | 115 | ns |
| Turn-off Delay Time | td(off) | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=25 | 390 | ns |
| Fall Time | tf | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=25 | 33 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=25 | 23.3 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=25 | 5.1 | mJ |
| Turn-on Delay Time | td(on) | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=150 | 133 | ns |
| Rise Time | tr | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=150 | 106 | ns |
| Turn-off Delay Time | td(off) | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=150 | 426 | ns |
| Fall Time | tf | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=150 | 77 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=150 | 29.5 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC=150A, VCE=600V, VGE= 15V, RG=4.7, Tvj=150 | 9.1 | mJ |
| SC Data | Isc | tp10us,VGE=15V,Tvj=150, VCC=600V,VCEM1200V | 450 | A |
| Diode Absolute Maximum Ratings | ||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | 150 | A | |
| Repetitive Peak Forward Current | IFRM | tp=1ms | 300 | A |
| Diode Characteristic Values | ||||
| Forward Voltage | VF | IF=150A,Tvj=25 | 2.05 - 2.80 | V |
| Forward Voltage | VF | IF=150A,Tvj=125 | 1.90 | V |
| Forward Voltage | VF | IF=150A,Tvj=150 | 1.80 | V |
| Recovered Charge | Qrr | IF=150A, VR=600V, -diF/dt =1100A/us, Tvj=25 | 7.87 | uC |
| Peak Reverse Recovery Current | Irr | IF=150A, VR=600V, -diF/dt =1100A/us, Tvj=25 | 34 | A |
| Reverse Recovery Energy | Erec | IF=150A, VR=600V, -diF/dt =1100A/us, Tvj=25 | 2.44 | mJ |
| Recovered Charge | Qrr | IF=150A, VR=600V, -diF/dt =1100A/us, Tvj=150 | 26.16 | uC |
| Peak Reverse Recovery Current | Irr | IF=150A, VR=600V, -diF/dt =1100A/us, Tvj=150 | 71 | A |
| Reverse Recovery Energy | Erec | IF=150A, VR=600V, -diF/dt =1100A/us, Tvj=150 | 9.2 | mJ |
| Module Characteristics | ||||
| Isolation Voltage | Visol | t=1min,f=50Hz | 2500 | V |
| Maximum Junction Temperature | Tjmax | 150 | ||
| Operating Junction Temperature | Tvj op | -40 - 125 | ||
| Storage Temperature | Tstg | -40 - 125 | ||
| Thermal Resistance Junction to Case | RJC | per IGBT | 0.13 | K/W |
| Thermal Resistance Junction to Case | RJC | per Diode | 0.33 | K/W |
| Thermal Resistance Case to Sink | RCS | Conductive grease applied | 0.012 - 0.035 | K/W |
| Module Electrodes Torque | Mt | Recommended(M6) | 3.0 - 5.0 | Nm |
| Module-to-Sink Torque | Ms | Recommended(M6) | 3.0 - 5.0 | Nm |
| Weight of Module | G | 315 | g | |
2508211548_YANGJIE-MG150HF12LEC2_C2942697.pdf
Related Products
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Dual NPN Transistor XZT MMDT3904 in SOT-363 Package Designed for Amplification and Switching Tasks
Product OverviewThe MMDT3904 is a dual NPN transistor in a SOT-363 package. It is constructed using an epitaxial planar die and is ideal for low power amplification and switching applications.Product AttributesBrand: X T ELECTRONICSModel: MMDT3904Package: SOT-363Type: Dual Transistor (NPN+NPN...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
