High speed IGBT module YANGJIE MG200HF12LEC2 with soft recovery anti parallel diode and low switching losses
Key Attributes
Model Number:
MG200HF12LEC2
Product Custom Attributes
Mfr. Part #:
MG200HF12LEC2
Package:
C2
Product Description
Product Overview
The MG200HF12LEC2 is a high-speed IGBT module designed for demanding applications. It features NPT technology for low switching losses and high short circuit capability. This module includes an ultra-fast, soft-recovery anti-parallel FWD and boasts low inductance. It is suitable for high-frequency drivers, solar inverters, UPS systems, and electric welding machines.
Product Attributes
- Brand: Yangjie
- Model: MG200HF12LEC2 S-M291
- Compliance: RoHS
- Revision: 1.2
- Date: 8-Apr-22
Technical Specifications
| Parameter | Symbol | Conditions | Value | Unit |
| IGBT Absolute Maximum Ratings | ||||
| Collector-Emitter Voltage | VCES | VGE=0V, IC =1mA, Tvj=25 | 1200 | V |
| Continuous Collector Current | IC | Tc=80 | 200 | A |
| Repetitive Peak Collector Current | ICRM | tp=1ms | 400 | A |
| Gate-Emitter Voltage | VGES | Tvj=25 | 20 | V |
| Total Power Dissipation | Ptot | Tc=25 Tvjmax=150 | 1358 | W |
| IGBT Characteristic Values | ||||
| Gate-emitter Threshold Voltage | VGE(th) | VGE=VCE, IC =8mA,Tvj=25 | 5.0 - 6.5 | V |
| Collector-Emitter Cut-off Current | ICES | VCE=1200V,VGE=0V,Tvj=25 | 1.0 | mA |
| Collector-Emitter Saturation Voltage | VCE(sat) | Ic=200A,VGE=15V, Tvj=25 | 3.0 - 3.5 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | Ic=200A,VGE=15V, Tvj=125 | 3.8 | V |
| Gate Charge | QG | 2.0 | uC | |
| Input Capacitance | Cies | VCE=25V,VGE =0V, f=1MHz,Tvj=25 | 13.2 | nF |
| Reverse Transfer Capacitance | Cres | 0.8 | nF | |
| Gate-Emitter leakage current | IGES | VCE=0 V, VGE=20V,Tvj = 25 | 400 | nA |
| Turn-on Delay Time | td(on) | IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=25 | 105 | ns |
| Rise Time | tr | IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=25 | 80 | ns |
| Turn-off Delay Time | td(off) | IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=25 | 285 | ns |
| Fall Time | tf | IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=25 | 24 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=25 | 21.8 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=25 | 7.0 | mJ |
| Turn-on Delay Time | td(on) | IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=125 | 112 | ns |
| Rise Time | tr | IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=125 | 86 | ns |
| Turn-off Delay Time | td(off) | IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=125 | 330 | ns |
| Fall Time | tf | IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=125 | 29 | ns |
| Energy Dissipation During Turn-on Time | Eon | IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=125 | 31.4 | mJ |
| Energy Dissipation During Turn-off Time | Eoff | IC =200 A, VCE = 600 V, VGE = 15V, RGON = 5.1, RGOFF =2.5, Tvj=125 | 10.2 | mJ |
| SC Data | Isc | Tp10us,VGE=15V, Tvj=125,Vcc=600V, VCEM1200V | 1500 | A |
| Diode Absolute Maximum Ratings | ||||
| Repetitive Peak Reverse Voltage | VRRM | Tvj=25 | 1200 | V |
| Continuous DC Forward Current | IF | 200 | A | |
| Repetitive Peak Forward Current | IFRM | tp=1ms | 400 | A |
| Diode Characteristic Values | ||||
| Forward Voltage | VF | IF=200A,Tvj=25 | 1.90 - 2.3 | V |
| Forward Voltage | VF | IF=200A,Tvj=125 | 1.95 | V |
| Recovered Charge | Qrr | IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=25 | 11.5 | uC |
| Peak Reverse Recovery Current | Irr | IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=25 | 105 | A |
| Reverse Recovery Energy | Erec | IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=25 | 6.8 | mJ |
| Recovered Charge | Qrr | IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=125 | 20.8 | uC |
| Peak Reverse Recovery Current | Irr | IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=125 | 124 | A |
| Reverse Recovery Energy | Erec | IF =200 A, VR=600V, -diF/dt =2500A/us, Tvj=125 | 13.8 | mJ |
| Module Characteristics | ||||
| Isolation voltage | Visol | t=1min,f=50Hz | 2500 | V |
| Maximum Junction Temperature | Tjmax | 150 | ||
| Operating Junction Temperature | Tvj op | -40 - 125 | ||
| Storage Temperature | Tstg | -40 - 125 | ||
| Thermal Resistance Junction-to Case (per IGBT) | RJC | 0.09 | K/W | |
| Thermal Resistance Junction-to Case (per Diode) | RJC | 0.19 | K/W | |
| Thermal Resistance Case-to Sink | RCS | Conductive grease applied | 0.046 | K/W |
| Module Electrodes Torque | Mt | Recommended(M6) | 3.0 - 5.0 | Nm |
| Module-to-Sink Torque | Ms | Recommended(M6) | 3.0 - 5.0 | Nm |
| Weight of Module | G | 315 | g | |
2411220012_YANGJIE-MG200HF12LEC2_C20602000.pdf
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