Low RDS ON and Fast Switching N Channel MOSFET Winsok Semicon WSK40200 Designed for Power Electronics
Key Attributes
Model Number:
WSK40200
Product Custom Attributes
Mfr. Part #:
WSK40200
Package:
TO-263-2L
Product Description
Product Overview
The WSK40200 is an N-Channel MOSFET utilizing advanced SGT MOSFET technology. It offers low RDS(ON), low gate charge, fast switching, and excellent avalanche characteristics, making it highly suitable for synchronous-rectification applications. Its design emphasizes ruggedness and stability, ensuring reliable performance in demanding environments.
Product Attributes
- Brand: Winsok
- Technology: SGT MOSFET
- Type: N-Channel
Technical Specifications
| Parameter | Conditions | Min. | Typ. | Max. | Units |
| General Parameters | |||||
| BVDSS | Drain-Source Breakdown Voltage, VGS=0V, ID=250A | 40 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance, VGS=10V, ID=55A | 1.5 | 2.0 | m | |
| RDS(ON) | Static Drain-Source On-Resistance, VGS=4.5V, ID=55A | 2.5 | 3.0 | V | |
| VGS(th) | Gate Threshold Voltage, VGS=VDS, ID=250A | 1.3 | 1.7 | 2.5 | V |
| IDSS | Drain-Source Leakage Current, VDS=40V, VGS=0V | 1.0 | A | ||
| IGSS | Gate-Body Leakage Current, VGS=20V, VDS=0V | 100 | nA | ||
| Dynamic Parameters | |||||
| Qg | Total Gate Charge, VDS=20V, VGS=10V, ID=20A | 96.8 | nC | ||
| Qgs | Gate-Source Charge, VDS=20V, VGS=10V, ID=20A | 14.5 | |||
| Qgd | Gate-Drain Charge, VDS=20V, VGS=10V, ID=20A | 18.4 | |||
| Td(on) | Turn-on Delay Time, VDS=20V, VGS=10V, RG=2, ID=20A | 26.6 | ns | ||
| Tr | Rise Time, VDS=20V, VGS=10V, RG=2, ID=20A | 9.3 | |||
| Td(off) | Turn-off Delay Time, VDS=20V, VGS=10V, RG=2, ID=20A | 96 | |||
| Tf | Fall Time, VDS=20V, VGS=10V, RG=2, ID=20A | 39.3 | |||
| Ciss | Input Capacitance, VDS=20V, VGS=0V, =100KHz | 6587 | pF | ||
| Coss | Output Capacitance, VDS=20V, VGS=0V, =100KHz | 2537 | |||
| Crss | Reverse Transfer Capacitance, VDS=20V, VGS=0V, =100KHz | 178 | |||
| Diode Characteristics | |||||
| IS | Continuous Source Current, VG=VD=0V, Force Current | 130 | A | ||
| ISP | Pulsed Source Current | 390 | |||
| VSD | Diode Forward Voltage, VGS=0V, IS=20A | 1.3 | V | ||
| trr | Reverse Recovery Time, IS=20A, di/dt=100A/s | 205 | ns | ||
| Qrr | Reverse Recovery Charge, IS=20A, di/dt=100A/s | 557.4 | |||
| Absolute Maximum Ratings | |||||
| VDS | Drain-Source Voltage | 40 | V | ||
| VGS | Gate-Source Voltage | 20 | V | ||
| ID | Continuous Drain Current (TJ=25C) | 200 | A | ||
| IDP | Pulsed Drain Current | 390 | A | ||
| EAS | Single Pulse Avalanche Energy (VDD=30V, RG=6, L=0.3mH, TJ=25C) | 300 | mJ | ||
| PD | Power Dissipation (TJ=25C) | 140 | W | ||
| TSTG | Storage Temperature Range | -55 | 150 | C | |
| TJ | Operating Junction Temperature Range | -55 | 150 | C | |
| Thermal Data | |||||
| RJA | Thermal Resistance Junction-Ambient (1 in2 FR-4 board, 2oz. Copper, still air, TA=25C) | 62 | C/W | ||
| RJC | Thermal Resistance Junction-Case | 0.89 | |||
2504101957_Winsok-Semicon-WSK40200_C47116171.pdf
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