power management device XCH 10N65F N Channel MOSFET with low gate charge and avalanche energy testing
Key Attributes
Model Number:
10N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-
RDS(on):
900mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
128pF
Input Capacitance(Ciss):
1.294nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
10N65F
Package:
TO-220F
Product Description
Product Overview
The 10N65F is an N-Channel Enhancement Mode Power MOSFET designed for power switch circuits in adaptors and chargers. It features fast switching, low ON resistance, low gate charge, and 100% single pulse avalanche energy testing, making it a reliable component for efficient power management.
Product Attributes
- Material: Molded plastic (UL Flammability Classification Rating 94V-0)
- Compliance: Lead free in compliance with EU RoHS 2011/65/EU directive
- Soldering Temperature: 275 maximum, 10s per JESD 22-B106
- Mounting Position: Any
Technical Specifications
| Symbol | Characteristics | Unit | Test Condition | Min | Typ | Max |
| BVDSS | Drain-Source Breakdown Voltage | V | VGS = 0 V,ID = 250 A | 650 | - | - |
| IDSS | Drain-Source Leakage Current | A | VDS = 650 V, VGS = 0 V | - | - | 1 |
| IGSS | Gate Leakage Current | nA | VGS = 30 V, VDS = 0 V | - | - | 100 |
| VGS(th) | Gate-Source Threshold Voltage | V | VDS = VGS , ID = 250 A | 2 | - | 4 |
| RDS(on) | Drain-Source On-State Resistance | VGS = 10 V, ID = 5 A | - | 0.75 | 0.9 | |
| gfs | Forward Transconductance | S | VDS = 15 V, ID = 5 A | - | 9.5 | - |
| Ciss | Input Capacitance | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | - | 1294 | - |
| Coss | Output Capacitance | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | - | 128 | - |
| Crss | Reverse Transfer Capacitance | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | - | 7 | - |
| td(ON) | Turn-on Delay Time | ns | ID = 10 A, VDD = 520 V, VGS = 10 V | - | 27 | - |
| tr | Rise Time | ns | ID = 10 A, VDD = 520 V, VGS = 10 V | - | 22 | - |
| td(OFF) | Turn-Off Delay Time | ns | ID = 10 A, VDD = 520 V, VGS = 10 V | - | 53 | - |
| tf | Fall Time | ns | ID = 10 A, VDD = 520 V, VGS = 10 V | - | 24 | - |
| QG | Total Gate Charge | nC | ID = 10 A, VDD = 520 V, VGS = 10 V | - | 35 | - |
| QGS | Gate to Source Charge | nC | ID = 10 A, VDD = 520 V, VGS = 10 V | - | 8 | - |
| QGD | Gate to Drain Charge | nC | ID = 10 A, VDD = 520 V, VGS = 10 V | - | 12 | - |
| IS | Maximun Body-Diode Continuous Current | A | - | - | 10 | |
| ISM | Maximun Body-Diode Pulsed Current | A | - | - | 40 | |
| VSD | Drain-Source Diode Forward Voltage | V | ISD = 10 A | - | - | 1.5 |
| trr | Reverse Recovery Time | ns | ISD = 10 A, VGS = 0 V, dIF / dt = 100 A/s | - | 528 | - |
| Qrr | Reverse Recovery Charge | C | ISD = 10 A, VGS = 0 V, dIF / dt = 100 A/s | - | 3.22 | - |
| PD | Power Dissipation | W | Tc=25C | - | - | 50 |
| ID | Continue Drain Current | A | Tc=25C | - | - | 10 |
| IDM | Pulsed Drain Current | A | Note1 | - | - | 40 |
| EAS | Single Pulse Avalanche Energy | mJ | Note1 | - | - | 600 |
| RJC | Thermal Resistance, Junction to Case | C/W | - | 3.13 | - | |
| RJA | Thermal Resistance, Junction to Ambient | C/W | - | 62.5 | - | |
| TJ | Operating Temperature Range | C | - | - | 150 | |
| TSTG | Storage Temperature Range | C | -55 | - | +150 |
2410010331_XCH-10N65F_C19184671.pdf
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