Power MOSFET N channel Multi EPI Super Junction 650V 25A XCH GSA25N65EF designed for energy management

Key Attributes
Model Number: GSA25N65EF
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
25A
RDS(on):
120mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.65nF
Pd - Power Dissipation:
35W
Output Capacitance(Coss):
90pF
Gate Charge(Qg):
110nC@10V
Mfr. Part #:
GSA25N65EF
Package:
TO-220F
Product Description

Product Overview

The GSW/GSA25N65EF is a 650V, 25A N-channel Multi-EPI Super-Junction Power MOSFET from XCH Semiconductor. It features advanced technology for improved characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This series is designed for applications requiring high voltage and efficient power handling.

Product Attributes

  • Brand: XCH Semiconductor
  • Series: Multi-EPI Super-Junction

Technical Specifications

ModelPKGVDSS (V)ID (A)IDM (A)VGSS (V)EAS (mJ)IAR (A)EAR (mJ)dv/dt (V/ns)PD (W)TJ, TSTG (C)RJC (C/W)RJA (C/W)BVDSS (V)IDSS (A)IGSS (nA)VGS(th) (V)RDS(on) ()gFS (S)Ciss (pF)Coss (pF)Crss (pF)td(on) (ns)tr (ns)td(off) (ns)tf (ns)Qg (nC)Qgs (nC)Qgd (nC)IS (A)ISM (A)VSD (V)trr (ns)Qrr (C)
GSW25N65EFTO-24765025* (TC=25)
15* (TC=100)
533050041.215210-55 to +1500.5862650 (TJ=25)
700 (TJ=150)
1 (TJ=150)100 (Fwd)
-100 (Rev)
2-40.14 (@VGS=10V, ID=12A)161650909281914012110-14091525750.9-1.51906
GSA25N65EFTO-220F65025* (TC=25)
15* (TC=100)
533050041.21535-55 to +1503.762650 (TJ=25)
700 (TJ=150)
1 (TJ=150)100 (Fwd)
-100 (Rev)
2-40.14 (@VGS=10V, ID=12A)161650909281914012110-14091525750.9-1.51906

2510230935_XCH-GSA25N65EF_C5375286.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.