Power Switching Silicon N-channel VDMOSFET XCH XCH2N65M Featuring TO-252 Package and RoHS Compliance
Key Attributes
Model Number:
XCH2N65M
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
2A
RDS(on):
3.8Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
6pF
Number:
1 N-channel
Pd - Power Dissipation:
35W
Output Capacitance(Coss):
31pF
Input Capacitance(Ciss):
290pF
Gate Charge(Qg):
9nC@10V
Mfr. Part #:
XCH2N65M
Package:
TO-252
Product Description
Product Description
The XCH2N65M is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This technology enhances performance by reducing conduction loss, improving switching speed, and increasing avalanche energy. It is designed for various power switching circuits, contributing to system miniaturization and higher efficiency. The device comes in a TO-252 package that complies with RoHS standards.
Product Attributes
- Package: TO-252
- RoHS Standard: Compliant
Technical Specifications
| Model | VDSS (V) | ID (A) | PD (W) | RDS(ON) () | VGS(TH) (V) | EAS (mJ) | Package |
| XCH2N65M | 650 | 2.0 | 35 | 3.8 (typ.) | 2.0 - 4.0 | 68 | TO-252 |
2508261745_XCH-XCH2N65M_C7435477.pdf
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