N Channel Power MOSFET XCH XCH5N65F Suitable for Adaptors Chargers and Power Switch Circuits
Key Attributes
Model Number:
XCH5N65F
Product Custom Attributes
Mfr. Part #:
XCH5N65F
Package:
TO220-AB
Product Description
Product Overview
The XCH5N65 Series is a N-Channel Enhancement Mode Power MOSFET designed for high-efficiency power switching applications. It features fast switching speeds, low ON resistance, and low gate charge, making it ideal for power switch circuits in adaptors and chargers. The MOSFET is available in multiple package types (TO-220F, TO-220AB, TO-263, TO-252, TO-251) and is constructed with molded plastic meeting UL Flammability Classification Rating 94V-0. It is lead-free and compliant with EU RoHS 2011/65/EU directive.
Product Attributes
- Brand: XCH (Implied by product series name)
- Certifications: EU RoHS 2011/65/EU compliant, UL Flammability Classification Rating 94V-0
- Material: Molded plastic
- Mounting Position: Any
Technical Specifications
| Characteristics | Symbol | TO-220AB/263 | TO-220F | TO-251/252 | Unit | Test Condition | Min | Typ | Max |
| Drain-Source Breakdown Voltage | BVDSS | 650 | - | - | V | VGS = 0 V,ID = 250 A | 650 | 680 | - |
| Drain-Source Leakage Current | IDSS | - | - | - | A | VDS = 650 V, VGS = 0 V | - | - | 1 |
| Gate Leakage Current | IGSS | - | - | - | nA | VGS = 30 V, VDS = 0 V | - | - | 100 |
| Gate-Source Threshold Voltage | VGS(th) | - | - | - | V | VDS = VGS , ID = 250 A | 2 | - | 4 |
| Drain-Source On-State Resistance | RDS(on) | - | 2.1 | 2.8 | VGS = 10 V, ID = 2 A | - | 2.1 | 2.8 | |
| Forward Transconductance | gfs | - | 3.5 | - | S | VDS = 15 V, ID = 2 A | - | 3.5 | - |
| Input Capacitance | Ciss | - | 623 | - | pF | VGS = 0 V, VDS = 2 V, f = 200KHz | - | 623 | - |
| Output Capacitance | Coss | - | 55 | - | pF | VGS = 0 V, VDS = 2 V, f = 200KHz | - | 55 | - |
| Reverse Transfer Capacitance | Crss | - | 8.5 | - | pF | VGS = 0 V, VDS = 2 V, f = 200KHz | - | 8.5 | - |
| Turn-on Delay Time | td(ON) | - | 8.5 | - | ns | ID = 4 A, VDD = 325 V, RG= 10 | - | 8.5 | - |
| Rise Time | tr | - | 6.5 | - | ns | ID = 4 A, VDD = 325 V, RG= 10 | - | 6.5 | - |
| Turn-Off Delay Time | td(OFF) | - | 31 | - | ns | ID = 4 A, VDD = 325 V, RG= 10 | - | 31 | - |
| Fall Time | tf | - | 8.5 | - | ns | ID = 4 A, VDD = 325 V, RG= 10 | - | 8.5 | - |
| Total Gate Charge | QG | - | 15 | - | nC | ID = 4 A, VDD = 520 V, VGS = 10 V | - | 15 | - |
| Gate to Source Charge | QGS | - | 2.8 | - | nC | ID = 4 A, VDD = 520 V, VGS = 10 V | - | 2.8 | - |
| Gate to Drain Charge | QGD | - | 6.3 | - | nC | ID = 4 A, VDD = 520 V, VGS = 10 V | - | 6.3 | - |
| Maximun Body-Diode Continuous Current | IS | - | - | - | A | - | - | 5 | |
| Maximun Body-Diode Pulsed Current | ISM | - | - | - | A | - | - | 20 | |
| Drain-Source Diode Forward Voltage | VSD | - | - | - | V | ISD = 4 A | - | - | 1.5 |
| Reverse Recovery Time | trr | - | 430 | - | ns | ISD = 4 A, VGS = 0 V, dIF / dt = 100 A/s | - | 430 | - |
| Reverse Recovery Charge | Qrr | - | 1.27 | - | C | ISD = 4 A, VGS = 0 V, dIF / dt = 100 A/s | - | 1.27 | - |
| Continue Drain Current | ID | 5 | - | 5 | A | Tc=25C | - | - | 5 |
| Pulsed Drain Current | IDM | 20 | - | 20 | A | Note1 | - | - | 20 |
| Power Dissipation | PD | 85 | 30 | 85 | W | Tc=25C | - | - | 85/30 |
| Single Pulse Avalanche Energy | EAS | 150 | - | 150 | mJ | Note1 | - | - | 150 |
| Operating Temperature Range | TJ | - | - | - | C | -55 | - | 150 | |
| Storage Temperature Range | TSTG | - | - | - | C | -55 | - | 150 | |
| Thermal Resistance, Junction to Case | RJC | 1.67 | 4.17 | 1.67 | C/W | - | - | 1.67/4.17 | |
| Thermal Resistance, Junction to Ambient | RJA | 62.5 | 100 | 62.5 | C/W | - | - | 62.5/100 |
2512121540_XCH-XCH5N65F_C53155324.pdf
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