Low Gate Charge N Channel Power MOSFET VBsemi Elec HFD4N50-VB with RoHS Compliance and TO 252 Package
Key Attributes
Model Number:
HFD4N50-VB
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.1Ω@10V
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7pF
Number:
1 N-channel
Output Capacitance(Coss):
177pF
Input Capacitance(Ciss):
1.417nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
48nC@10V
Mfr. Part #:
HFD4N50-VB
Package:
TO-252
Product Description
HFD4N50-VB Power MOSFET
The HFD4N50-VB is a high-performance N-Channel Power MOSFET designed for simple drive requirements and enhanced ruggedness. It features low gate charge (Qg), improved gate, avalanche, and dynamic dV/dt ruggedness, and fully characterized capacitance, avalanche voltage, and current. This product is compliant with the RoHS directive 2002/95/EC.
Product Attributes
- Brand: VBsemi
- Model: HFD4N50-VB
- Configuration: Single
- Certifications: RoHS Compliant
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = 250 A | 650 | - | - | V |
| VDS Temperature Coefficient | VDS/TJ | Reference to 25 C, ID = 1 mA | - | -670 | - | mV/C |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = 250 A | 2.5 | - | 5.0 | V |
| Gate-Source Leakage | IGSS | VGS = 30 V | - | - | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = 650 V, VGS = 0 V | - | - | 25 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS = 520 V, VGS = 0 V, TJ = 125 C | - | - | 250 | A |
| Drain-Source On-State Resistance | RDS(on) | ID = 3.1 A, VGS = 10 V | - | - | 2.1 | |
| Forward Transconductance | gfs | VDS = 50 V, ID = 3.1 A | 3.9 | - | - | S |
| Input Capacitance | Ciss | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | - | 1417 | - | pF |
| Output Capacitance | Coss | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | - | 177 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | - | 7.0 | - | pF |
| Output Capacitance | Coss | VDS = 520 V, f = 1.0 MHz | - | 48 | - | pF |
| Effective Output Capacitance | Coss eff. | VDS = 0 V to 520 V | - | 84 | - | pF |
| Total Gate Charge | Qg | ID = 3.2 A, VDS = 400 V, VGS = 10 V | - | - | 48 | nC |
| Gate-Source Charge | Qgs | ID = 3.2 A, VDS = 400 V, VGS = 10 V | - | - | 12 | nC |
| Gate-Drain Charge | Qgd | ID = 3.2 A, VDS = 400 V, VGS = 10 V | - | - | 19 | nC |
| Turn-On Delay Time | td(on) | VDD = 325 V, ID = 3.2 A, RG = 9.1 , RD = 62 | - | 4 | - | ns |
| Rise Time | tr | VDD = 325 V, ID = 3.2 A, RG = 9.1 , RD = 62 | - | 20 | - | ns |
| Turn-Off Delay Time | td(off) | VDD = 325 V, ID = 3.2 A, RG = 9.1 , RD = 62 | - | 34 | - | ns |
| Fall Time | tf | VDD = 325 V, ID = 3.2 A, RG = 9.1 , RD = 62 | - | 18 | - | ns |
| Continuous Source-Drain Diode Current | IS | - | - | - | 4 | A |
| Pulsed Diode Forward Current | ISM | - | - | - | 21 | A |
| Body Diode Voltage | VSD | TJ = 25 C, IS = 3.2 A, VGS = 0 V | - | - | 1.5 | V |
| Body Diode Reverse Recovery Time | trr | TJ = 25 C, IF = 3.2 A, dI/dt = 100 A/s | - | 493 | 739 | ns |
| Body Diode Reverse Recovery Charge | Qrr | TJ = 25 C, IF = 3.2 A, dI/dt = 100 A/s | - | 2.1 | 3.2 | C |
2410121727_VBsemi-Elec-HFD4N50-VB_C3040280.pdf
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