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quality Power MOSFET XYD X5N030TLE2C featuring low Ciss and fast switching ideal for battery management systems factory
quality Power MOSFET XYD X5N030TLE2C featuring low Ciss and fast switching ideal for battery management systems factory
quality Power MOSFET XYD X5N030TLE2C featuring low Ciss and fast switching ideal for battery management systems factory
quality Power MOSFET XYD X5N030TLE2C featuring low Ciss and fast switching ideal for battery management systems factory

Power MOSFET XYD X5N030TLE2C featuring low Ciss and fast switching ideal for battery management systems

Key Attributes
Model Number: X5N030TLE2C
Product Custom Attributes
Mfr. Part #:
X5N030TLE2C
Package:
TO-252-2L
Product Description

Product Overview

The X5N030TLE2C is an N-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features low gate charge, low Ciss, and fast switching, making it suitable for applications like synchronous rectification for AC/DC quick chargers, battery management, and uninterruptible power supplies (UPS). It is 100% avalanche tested.

Product Attributes

  • Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
  • Origin: Xiamen
  • Model: X5N030TLE2C
  • Package: TO-252-2L
  • Packaging: Tape and Reel

Technical Specifications

ParameterSymbolMinTypMaxUnitNote/Test Conditions
Absolute Maximum RatingsVDSS--30V-
VGS-20-20V-
ID (TC=25)--110A-
ID (TC=100)--72A-
IDM--440A-
EAS (L=0.5mH,VD=24V, TC=25)--162mJ-
Power DissipationPD (TC=25)--106W-
PD (TA=25)--3W-
Operating TemperatureTj,TSTG-50-150-
Thermal CharacteristicsRth(J-c)-1.17-/W-
Rth(J-a)-41---
BVdss--30V-
Electrical Characteristics (Static)IDSS (VDS=30V,VGS=0V)--1A-
IGSSF (VGS=20V,VDS=0V)--100nA-
IGSSR (VGS=-20V,VDS=0V)--100-nA-
VGS(th) (VDS=VGS,ID=250A)1.2-2V-
RDS(on) (VGS=10V,ID=20A)-3.95m-
RDS(on) (VGS=4.5V,ID=20A)-6.48m-
Gate ResistanceRg (VGS=0V, VDS=0V, f=1MHz)-2.1--
Forward Transconductancegfs (VDS=3V,ID=20A)-30-S-
Dynamic CharacteristicsCiss (VDS=25V,VGS=0V,f=1.0MHZ)-2341-pF-
Coss (VDS=25V,VGS=0V,f=1.0MHZ)-229-pF-
Crss (VDS=25V,VGS=0V,f=1.0MHZ)-221-pF-
Switching Characteristicstd(on) (VDD=15V, VGS=10V, RG=10, ID=20A)-14-ns-
tr (VDD=15V, VGS=10V, RG=10, ID=20A)-74-ns-
td(off) (VDD=15V, VGS=10V, RG=10, ID=20A)-103-ns-
tf (VDD=15V, VGS=10V, RG=10, ID=20A)-53-ns-
Gate Charge CharacteristicsQg (VDS=24V,ID=20A,VGS=10V)-52-nC-
Qgs (VDS=24V,ID=20A,VGS=10V)-11-nC-
Qgd (VDS=24V,ID=20A,VGS=10V)-10-nC-
Reverse Diode CharacteristicsIS--110A-
ISM--440A-
VSD (IS=20A,VGS=0V)--1.2V-
Reverse Recovery Timetrr (VGS=0V,IS=1A di/dt=100A/s,TJ=25)-22-ns-
Reverse Recovery ChargeQrr (VGS=0V,IS=1A di/dt=100A/s,TJ=25)-16-nC-

2509251450_XYD-X5N030TLE2C_C51952864.pdf

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