trench n channel mosfet XCH XCH3N10 offering superior gate charge and rds on performance for power devices
Key Attributes
Model Number:
XCH3N10
Product Custom Attributes
Mfr. Part #:
XCH3N10
Package:
SOT-23-3L
Product Description
Product Overview
The XCH3N10 is a high-performance trench N-channel MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: XCH
- Type: N-Ch MOSFET
- Technology: Advanced high cell density Trench technology
- Certifications: RoHS, Green Device Available
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit | |
| Absolute Maximum Ratings | BVDSS | Drain-Source Voltage | 100 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | ||||
| ID@TA=25°C | Continuous Drain Current | 3 | A | ||||
| ID@TA=70°C | Continuous Drain Current | 1.8 | A | ||||
| IDM | Pulsed Drain Current | 12 | A | ||||
| Thermal Data | PD@TA=25°C | Total Power Dissipation | 1.6 | W | |||
| TSTG | Storage Temperature Range | -55 | 150 | °C | |||
| TJ | Operating Junction Temperature Range | -55 | 150 | °C | |||
| Electrical Characteristics | BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 100 | V | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=1.5A | 202 | 240 | mΩ | ||
| RDS(ON) | Static Drain-Source On-Resistance | VGS=4.5V , ID=1A | 212 | mΩ | |||
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 1 | 1.6 | 2.2 | V | |
| IDSS | Drain-Source Leakage Current | VDS=100V , VGS=0V , TJ=25°C | 1 | μA | |||
| IGSS | Gate-Source Leakage Current | VGS=±20V , VDS=0V | ±100 | nA | |||
| Qg | Total Gate Charge | VDS=50V , VGS=0 to 10V , ID=2A | nC | ||||
| Ciss | Input Capacitance | VDS=25V , VGS=0V , f=1MHz | pF | ||||
| Diode Characteristics | IS | Continuous Source Current | VG=VD=0V , Force Current | 3 | A | ||
| VSD | Diode Forward Voltage | VGS=0V , IS=1.5A , TJ=25°C | 1.2 | V |
2512121540_XCH-XCH3N10_C53155320.pdf
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