High voltage Power MOSFET XCH GSA18N65E 650V 18A N channel Multi EPI Super Junction with low on resistance
Key Attributes
Model Number:
GSA18N65E
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
18A
RDS(on):
250mΩ@10V,9A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
2.6pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
30pF
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
1.23nF@25V
Gate Charge(Qg):
42nC@400V
Mfr. Part #:
GSA18N65E
Package:
TO-220F
Product Description
Product Overview
The GSA18N65E is a 650V, 18A N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for improved characteristics such as fast switching time, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This MOSFET is designed for high-voltage applications and offers reliable performance.
Product Attributes
- Brand: XCH Semiconductor
- Model: GSA18N65E
- Package: TO-220F
Technical Specifications
| Symbol | Parameter | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| VDSS | Drain-Source Voltage | 650 | V | |||
| ID | Drain Current -Continuous (TC = 25) | 18* | A | |||
| ID | Drain Current -Continuous (TC = 100) | 13* | A | |||
| IDM | Drain Current - Pulsed | 55 | A | |||
| VGSS | Gate-Source voltage | 30 | V | |||
| EAS | Single Pulsed Avalanche Energy | 320 | mJ | |||
| IAR | Avalanche Current | 3 | A | |||
| EAR | Repetitive Avalanche Energy | 2 | mJ | |||
| dv/dt | Peak Diode Recovery dv/dt | 15 | V/ns | |||
| dVds/dt | Drain Source voltage slope | Vds=480V | 50 | V/ns | ||
| PD | Power Dissipation (TC = 25) | 35 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | +150 | |||
| TL | Max. Lead Temperature for Soldering Purpose, 1/8 from Case for 5 Seconds | 300 | ||||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction-to-Case | 1.2 | /W | |||
| RCS | Thermal Resistance, Case-to-Sink | Typ. | 0.5 | /W | ||
| RJA | Thermal Resistance, Junction-to-Ambient | 62 | /W | |||
| Electrical Characteristics | ||||||
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A, TJ = 25 | 650 | - | - | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID = 250A, TJ = 150 | - | 700 | - | V |
| BVDSS/TJ | Breakdown Voltage Temperature Coefficient | ID = 250A, Referenced to 25 | - | 0.6 | - | V/ |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V | - | - | 10 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS = 0V, TJ = 150 | - | - | 1 | A |
| IGSSF | Gate-Body Leakage Current, Forward | VGS = 30V, VDS = 0V | - | - | 100 | nA |
| IGSSR | Gate-Body Leakage Current, Reverse | VGS = -30V, VDS = 0V | - | - | -100 | nA |
| VGS(th) | Gate Threshold Voltage | VDS = VGS, ID = 250A | 2.5 | - | 4.5 | V |
| RDS(on) | Static Drain-Source On-Resistance | VGS = 10V, ID = 9A | - | 0.22 | 0.25 | |
| gFS | Forward Transconductance | VDS = 40V, ID = 9A | - | 16 | - | S |
| Ciss | Input Capacitance | VDS = 25V, VGS = 0V, f = 1.0MHz | - | 1230 | - | pF |
| Coss | Output Capacitance | - | 30 | - | pF | |
| Crss | Reverse Transfer Capacitance | - | 2.6 | - | pF | |
| td(on) | Turn-On Delay Time | VDD = 400V, ID =9A RG = 20 (Note 4) | - | 20 | - | ns |
| tr | Turn-On Rise Time | - | 17 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 170 | - | ns | |
| tf | Turn-Off Fall Time | - | 13 | - | ns | |
| Qg | Total Gate Charge | VDS = 400V, ID = 9A VGS = 10V (Note 4) | - | 42 | - | nC |
| Qgs | Gate-Source Charge | - | 6 | - | nC | |
| Qgd | Gate-Drain Charge | - | 29 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| IS | Maximum Continuous Drain-Source Diode Forward Current | - | - | 18 | A | |
| ISM | Maximum Pulsed Drain-Source Diode Forward Current | - | - | 42 | A | |
| VSD | Drain-Source Diode Forward Voltage | VGS = 0V, IS = 9A | - | 0.9 | 1.5 | V |
| trr | Reverse Recovery Time | VGS = 0V, IS = 9A dIF/dt =100A/s | - | 380 | - | ns |
| Qrr | Reverse Recovery Charge | - | 4.5 | - | C | |
2303201000_XCH-GSA18N65E_C5375285.pdf
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