Load Switching Dual P Channel MOSFET VBsemi Elec AO4813 VB with Low On Resistance and RoHS Compliance
Key Attributes
Model Number:
AO4813-VB
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
21mΩ@10V;28mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
135pF
Number:
2 P-Channel
Output Capacitance(Coss):
215pF
Input Capacitance(Ciss):
1.35nF
Pd - Power Dissipation:
5W
Gate Charge(Qg):
32nC@10V
Mfr. Part #:
AO4813-VB
Package:
SO-8
Product Description
Product Overview
The AO4813-VB is a Dual P-Channel Trench Power MOSFET designed for load switching applications in notebook PCs, desktop PCs, and game stations. It offers high performance with a low on-resistance and is 100% UIS tested. This device is Halogen-free and RoHS compliant.
Product Attributes
- Brand: VBsemi
- Model: AO4813-VB
- Type: Dual P-Channel MOSFET
- Technology: Trench Power MOSFET
- Certifications: Halogen-free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | VDS | VGS = 0 V, ID = - 250 A | - | - | -30 | V |
| Gate-Source Threshold Voltage | VGS(th) | VDS = VGS, ID = - 250 A | - | -1.0 | -3.0 | V |
| Gate-Source Leakage | IGSS | VGS = 20 V | - | - | 100 | nA |
| Zero Gate Voltage Drain Current | IDSS | VDS = - 30 V, VGS = 0 V | - | -1 | A | |
| On-State Drain Current | ID(on) | VDS - 10 V, VGS = - 10 V | - | -30 | - | A |
| Drain-Source On-State Resistance | RDS(on) | VGS = - 10 V, ID = - 7.3 A | - | 0.02 | 0.021 | |
| Drain-Source On-State Resistance | RDS(on) | VGS = - 4.5 V, ID = - 6.2 A | - | 0.028 | - | |
| Forward Transconductance | gfs | VDS = - 10 V, ID = - 9.1 A | - | 23 | - | S |
| Input Capacitance | Ciss | VDS = - 15 V, VGS = 0 V, f = 1 MHz | - | 1350 | - | pF |
| Output Capacitance | Coss | VDS = - 15 V, VGS = 0 V, f = 1 MHz | - | 215 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS = - 15 V, VGS = 0 V, f = 1 MHz | - | 185 | - | pF |
| Total Gate Charge | Qg | VDS = - 15 V, VGS = - 10 V, ID = - 9.1 A | - | 32 | 50 | nC |
| Gate-Source Charge | Qgs | VDS = - 15 V, VGS = - 4.5 V, ID = - 9.1 A | - | 15 | 25 | nC |
| Gate-Drain Charge | Qgd | VDS = - 15 V, VGS = - 4.5 V, ID = - 9.1 A | - | 7.5 | - | nC |
| Gate Resistance | Rg | f = 1 MHz | - | 5.8 | - | |
| Continuous Source-Drain Diode Current | IS | TC = 25 C | - | -4.1 | - | A |
| Body Diode Voltage | VSD | IS = - 2 A, VGS = 0 V | - | -0.75 | -1.2 | V |
| Body Diode Reverse Recovery Time | trr | IF = - 2 A, dI/dt = 100 A/s, TJ = 25 C | - | 34 | 60 | ns |
| Body Diode Reverse Recovery Charge | Qrr | IF = - 2 A, dI/dt = 100 A/s, TJ = 25 C | - | 22 | 40 | nC |
2504171620_VBsemi-Elec-AO4813-VB_C709893.pdf
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