600V High Speed Switching IGBT VBsemi Elec VBP16I40 with Low Turn Off Losses and Ultra Low Gate Charge
Key Attributes
Model Number:
VBP16I40
Product Custom Attributes
Mfr. Part #:
VBP16I40
Package:
TO-247
Product Description
Product Overview
The VBP16I40 is a 600V Trench and Fieldstop IGBT designed for high-speed switching applications. It offers very low VCEsat, low turn-off losses, and ultra-low gate charge (Qg), making it suitable for demanding power supply and industrial applications. Key features include a maximum junction temperature of 175C and avalanche energy rating (UIS). This IGBT is ideal for telecommunications, lighting, consumer electronics, industrial equipment, and renewable energy sectors.
Product Attributes
- Brand: VBsemi
- Model: VBP16I40
- Package: TO-247
- Certifications: RoHS compliant, Halogen-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Collector-Emitter Voltage | VCE | VGE = 0 V, IC = 250 A | 600 | V | ||
| Gate-Emitter Threshold Voltage | VGE(th) | VCE = VGE, ID = 250 A | 4 | 5 | 6 | V |
| Zero Gate Voltage Collector Current | ICES | VCE = 600 V, VGE = 0 V, TJ = 25 C | 1 | 20 | A | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE = 15 V, IC = 40 A | 1.8 | V | ||
| Input Capacitance | Cies | VGE = 0 V, VCE = 25 V, f = 500 KHz | 4600 | pF | ||
| Output Capacitance | Coes | 186 | pF | |||
| Reverse Transfer Capacitance | Cres | 148 | pF | |||
| Total Gate Charge | Qg | IC = 40 A, VCE = 400 V, VGE = 20 V | 36 | nC | ||
| Diode Forward Current | IF | 40 | A | |||
| Diode Forward Voltage | VF | IF = 40 A | 2.1 | V | ||
| Reverse Recovery Time | trr | TJ = 25 C, IF = 40 A, dIF/dt = 200 A/s, VR = 400 V | 55 | ns | ||
| Maximum Power Dissipation | PD | TC = 25 C | 248 | W | ||
| Maximum Junction Temperature | TJ | -55 | 175 | C | ||
| Collector Current (TC=25) | IC | 80 | A | |||
| Collector Current (TC=100) | IC | 40 | A | |||
| Pulsed Collector Current | ICM | 120 | A | |||
| Collector-Emitter Voltage (sat) | VCE(sat) | 1.8 | V | |||
| Maximum Junction-to-Case Thermal Resistance | RthJC | 0.5 | C/W |
2412131800_VBsemi-Elec-VBP16I40_C42412441.pdf
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