N Channel Power MOSFET VISHAY SIR668ADP T1 RE3 100 Volt Drain Source Breakdown Voltage for Switching
Key Attributes
Model Number:
SIR668ADP-T1-RE3
Product Custom Attributes
Gate Threshold Voltage (Vgs(th)):
4V
Operating Temperature:
-55℃~+150℃
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
18pF
Number:
1 N-channel
Pd - Power Dissipation:
104W
Input Capacitance(Ciss):
3.75nF
Mfr. Part #:
SIR668ADP-T1-RE3
Package:
PowerPAKSO-8
Product Description
SiR668ADP N-Channel 100 V (D-S) MOSFET
The SiR668ADP is a high-performance N-Channel Power MOSFET featuring TrenchFET Gen IV technology. It offers a very low RDS(on) x Qg figure-of-merit (FOM), optimized for the lowest RDS(on) x Qoss FOM. This MOSFET is 100% tested for Rg and UIS, making it suitable for demanding applications such as synchronous rectification, primary side switching, DC/DC converters, OR-ing, power supplies, motor drive control, and battery/load switching.
Product Attributes
- Brand: Vishay Siliconix
- Package: PowerPAK SO-8
- Configuration: Single
- Material: Lead (Pb)-free and halogen-free
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-source breakdown voltage | VDS | VGS = 0 V, ID = 250 A | 100 | - | - | V |
| Gate-source threshold voltage | VGS(th) | VDS = VGS, ID = 250 A | 2 | - | 4 | V |
| Zero gate voltage drain current | IDSS | VDS = 100 V, VGS = 0 V | - | - | 1 | A |
| Drain-source on-state resistance | RDS(on) | VGS = 10 V, ID = 20 A | - | 0.0040 | 0.0048 | |
| Drain-source on-state resistance | RDS(on) | VGS = 7.5 V, ID = 15 A | - | 0.0054 | 0.0070 | |
| Total gate charge | Qg | VDS = 50 V, VGS = 10 V, ID = 10 A | - | 54 | 81 | nC |
| Total gate charge | Qg | VDS = 50 V, VGS = 7.5 V, ID = 10 A | - | 42 | 63 | nC |
| Continuous drain current | ID | TC = 25 C | - | - | 93.6 | A |
| Continuous drain current | ID | TC = 70 C | - | - | 74.8 | A |
| Pulsed drain current | IDM | (t = 100 s) | - | - | 200 | A |
| Single pulse avalanche current | IAS | L = 0.1 mH | - | - | 35 | A |
| Single pulse avalanche energy | EAS | - | - | - | 61.2 | mJ |
| Maximum power dissipation | PD | TC = 25 C | - | - | 104 | W |
| Maximum power dissipation | PD | TC = 70 C | - | - | 66.6 | W |
| Maximum junction-to-ambient thermal resistance | RthJA | t 10 s | - | 15 | 20 | C/W |
| Maximum junction-to-case (drain) thermal resistance | RthJC | Steady state | - | 0.9 | 1.2 | C/W |
| Operating junction and storage temperature range | TJ, Tstg | - | -55 | - | +150 | C |
| Soldering recommendations (peak temperature) | - | - | - | - | 260 | C |
2410121815_VISHAY-SIR668ADP-T1-RE3_C5220834.pdf
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