N Channel MOSFET XNRUSEMI XRS80N04HF Featuring Split Gate Trench Technology for Power Conversion
Key Attributes
Model Number:
XRS80N04HF
Product Custom Attributes
Mfr. Part #:
XRS80N04HF
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The XRS80N04HF is a high-performance N-Channel Fast Switching MOSFET featuring Split Gate Trench MOSFET technology. It offers excellent heat dissipation through its advanced package design and a high-density cell structure for low RDS(ON). This MOSFET is ideal for DC-DC converters, power management functions, and synchronous-rectification applications, providing efficient and reliable power control.
Product Attributes
- Brand: power-mos.com
- Technology: Split Gate Trench MOSFET
- Package: PDFN5060-8L
Technical Specifications
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 40 | --- | --- | V |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=10A | --- | 3.6 | 4.5 | m |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 2.4 | 3 | 3.6 | V |
| IDSS | Drain-Source Leakage Current | VDS=40V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| Qg | Total Gate Charge (4.5V) | VDS=20V , VGS=10V , ID=20A | --- | 27 | --- | nC |
| Ciss | Input Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 1402 | --- | pF |
| Coss | Output Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 476 | --- | pF |
| Crss | Reverse Transfer Capacitance | VDS=20V , VGS=0V , f=1MHz | --- | 40 | --- | pF |
| trr | Reverse Recovery Time | IF=20A , di/dt=100A/ s , TJ=25 | --- | 23 | --- | nS |
| Qrr | Reverse Recovery Charge | IF=20A , di/dt=100A/ s , TJ=25 | --- | 20 | --- | nC |
2511271355_XNRUSEMI-XRS80N04HF_C52195551.pdf
Related Products
High Voltage IGBT Module YANGJIE DGW10N120CTL Featuring Fast Recovery Diode for AC DC Servo Drive Amplifiers
Product Overview The DGW10N120CTL S-M352D is a high-performance IGBT module featuring Low VCE(sat) Trench-FS IGBT technology, a maximum junction temperature of 175, and a positive temperature coefficient. It includes a fast and soft recovery anti-parallel FWD and boasts high short circuit capability ...
High Forward Surge Capability and Low Reverse Leakage Surface Mount Rectifier ZHIDE RS3M for Electronics
Product OverviewThe RS3A-RS3M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding electronic circuits. These diodes are ...
Surface mount digital transistor YANGJIE DTC114YE with built in resistors and RoHS compliant halogen free epoxy
Product OverviewThe DTC114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It features a moisture sensitivity level of 1 and an epoxy that meets UL-94 V-0 flammability rating and is halogen-free. This product is ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
