High cell density trenched MOSFET XNRUSEMI XR30J03D ideal for synchronous buck converter power stages
Key Attributes
Model Number:
XR30J03D
Product Custom Attributes
Mfr. Part #:
XR30J03D
Package:
DFN3030-8L
Product Description
Product Overview
The XR30J03D is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, contributing to efficient power conversion. This device is RoHS and Green Product compliant, with 100% EAS guaranteed and full functional reliability.
Product Attributes
- Brand: XR (implied from product name)
- Certifications: RoHS, Green Product
- Features: Fast Switching, Super Low Gate Charge, Excellent CdV/dt effect decline, Advanced high cell density Trench technology
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current, VGS @ 10V | ID@TA=25 | 30 | A | |||
| Continuous Drain Current, VGS @ 10V | ID@TA=70 | 20 | A | |||
| Pulsed Drain Current | IDM | 90 | A | |||
| Single Pulse Avalanche Energy | EAS | 39 | mJ | |||
| Avalanche Current | IAS | 30 | A | |||
| Total Power Dissipation | PD@TA=25 | 15 | W | |||
| Storage Temperature Range | TSTG | -55 | 150 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | |||
| Thermal Resistance Junction-ambient | RJA | 85 | /W | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V , ID=250uA | 30 | V | ||
| BVDSS Temperature Coefficient | BVDSS/TJ | Reference to 25, ID=1mA | 0.034 | V/ | ||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V , ID=7A | 7 | 9 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V , ID=4A | 10 | 13 | V | |
| Gate Threshold Voltage | VGS(th) | VGS=VDS , ID =250uA | 1.2 | 1.5 | 2.5 | V |
| VGS(th) Temperature Coefficient | VGS(th) | -3.84 | mV/ | |||
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=25 | 1 | uA | ||
| Drain-Source Leakage Current | IDSS | VDS=24V , VGS=0V , TJ=55 | 5 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=±20V , VDS=0V | ±100 | nA | ||
| Gate Resistance | Rg | VDS=0V , VGS=0V , f=1MHz | 1.04 | 2.1 | ||
| Total Gate Charge (4.5V) | Qg | VDS=15V , VGS=4.5V , ID=7A | 8.4 | nC | ||
| Gate-Source Charge | Qgs | 3.1 | ||||
| Gate-Drain Charge | Qgd | 2.8 | ||||
| Turn-On Delay Time | Td(on) | VDD=15V , VGS=10V , RG=3.3 ID=7A | 2.4 | ns | ||
| Rise Time | Tr | 72.0 | ||||
| Turn-Off Delay Time | Td(off) | 36.0 | ||||
| Fall Time | Tf | 14.4 | ||||
| Input Capacitance | Ciss | VDS=15V , VGS=0V , f=1MHz | 816 | pF | ||
| Output Capacitance | Coss | 107.8 | ||||
| Reverse Transfer Capacitance | Crss | 82.6 | ||||
| Continuous Source Current | IS | VG=VD=0V , Force Current | 30 | A | ||
| Pulsed Source Current | ISM | 30 | A | |||
| Diode Forward Voltage | VSD | VGS=0V , IS=1A , TJ=25 | 1.2 | V |
2512081620_XNRUSEMI-XR30J03D_C52195859.pdf
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