High current power MOSFET XTX BRP80N120P8 N channel enhancement mode with 80V drain to source voltage
Key Attributes
Model Number:
BRP80N120P8
Product Custom Attributes
Mfr. Part #:
BRP80N120P8
Package:
TO220FB-3L
Product Description
BRP80N120P8 N-channel Enhancement Mode Power MOSFET
The BRP80N120P8 is an N-channel enhancement mode power MOSFET from XTX Technology Inc. It offers an 80V drain-to-source voltage and a continuous drain current of 120A. Key features include ultra-low RDS(ON) of less than 5.5m at VGS = 10V, low gate charge, and lead-free construction. This MOSFET is designed for applications such as motor driving in power tools, e-vehicles, and robotics, as well as current switching in DC/DC and AC/DC converters, and power management systems.
Product Attributes
- Brand: XTX Technology Inc.
- Origin: China (implied by company name and contact details)
- Package: TO220FB-3L
- Marking: P80N120
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-to-Source Voltage | 80 | V | |||
| VGS | Gate-to-Source Voltage | 20 | V | |||
| ID | Continuous Drain Current | TC = 25C | 120 | A | ||
| ID | Continuous Drain Current | TC = 100C | 80 | A | ||
| IDM | Pulsed Drain Current (1) | 480 | A | |||
| EAS | Single Pulsed Avalanche Energy (2) | 396 | mJ | |||
| PD | Power Dissipation, TC = 25C | 182 | W | |||
| RJC | Thermal Resistance, Junction to Case | 0.65 | C/W | |||
| TJ, TSTG | Junction & Storage Temperature Range | -55 | +150 | C | ||
| Electrical Characteristics (TJ=25C, unless otherwise noted) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | ID = 250A, VGS = 0V | 80 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 80V, VGS = 0V | - | - | 1 | uA |
| IGSS | Gate-Body Leakage Current | VDS = 0V, VGS = 20V | - | - | 100 | nA |
| VGS(TH) | Gate Threshold Voltage | VDS = VGS, ID = 250uA | 2.0 | 3.0 | 4.0 | V |
| RDS(ON) | Static Drain-Source ON-Resistance(3) | VGS = 10V, ID = 20A | 4.4 | 5.5 | m | |
| Ciss | Input Capacitance | VGS = 0V, VDS = 40V, f = 1MHz | 3507 | 3570 | 3832 | pF |
| Coss | Output Capacitance | 613 | 678 | 712 | pF | |
| Crss | Reverse Transfer Capacitance | 17 | 19 | 22 | pF | |
| Rg | Gate Resistance | VGS = 0V, VDS = 0V, f = 1MHz | - | 1.5 | - | |
| Qg | Total Gate Charge | VGS = 0 to 10V, VDS = 40V, ID = 20A | - | 51 | - | nC |
| Qgs | Gate Source Charge | - | 20 | - | nC | |
| Qgd | Gate Drain("Miller") Charge | - | 10 | - | nC | |
| td(on) | Turn-On Delay Time | VGS = 10V, VDS = 40V, RL= 2, RGEN = 3 | - | 15 | - | ns |
| tr | Turn-On Rise Time | - | 23 | - | ns | |
| td(off) | Turn-Off Delay Time | - | 31 | - | ns | |
| tf | Turn-Off Fall Time | - | 13 | - | ns | |
| IS | Continuous Source Current | - | - | 120 | A | |
| VSD | Forward on voltage | VGS = 0V, IS = 1A | - | - | 1.0 | V |
| Trr | Reverse Recovery Time | IF = 15A, di/dt = 100A/us | - | 57 | - | ns |
| Qrr | Reverse Recovery Charge | - | 91 | - | nC | |
2509261615_XTX-BRP80N120P8_C51966736.pdf
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