Power mosfet XTX BRT30N70P1 featuring 70 amp continuous drain current and low rds on for pwm applications
Key Attributes
Model Number:
BRT30N70P1
Product Custom Attributes
Mfr. Part #:
BRT30N70P1
Package:
PDFN-8L(3.3x3.3)
Product Description
Product Overview
The BRT30N70P1 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features 30V drain-to-source voltage and 70A continuous drain current with low on-resistance (RDS(ON) < 6.0m @ VGS = 10V). Utilizing advanced trench technology, it offers excellent RDS(ON) and low gate charge, making it suitable for load switch, PWM applications, and power management scenarios. The device is lead-free.
Product Attributes
- Brand: XTX Technology Inc.
- Origin: China (implied by company name and contact details)
- Package Type: PDFN3.3*3.3-8L
- Marking: T30N70
- Certifications: Lead Free
Technical Specifications
| Symbol | Definition | Ratings | Unit | Condition |
| ID | Continuous Drain Current | 70 | A | TC = 25C |
| 45 | TC = 100C | |||
| IDM | Pulsed Drain Current | 280 | A | (1) |
| EAS | Single Pulsed Avalanche Energy | 81 | mJ | (2) |
| PD | Power Dissipation | 50 | W | TC = 25C |
| RJC | Thermal Resistance, Junction to Case | 2.5 | C/W | |
| VDS | Drain-to-Source Voltage | 30 | V | |
| VGS | Gate-to-Source Voltage | 20 | V | |
| V(BR)DSS | Drain-Source Breakdown Voltage | 30 | V | ID = 250A, VGS = 0V |
| RDS(ON) | Static Drain-Source ON-Resistance | 6.0 | m | VGS = 10V, ID = 30A |
| RDS(ON) | Static Drain-Source ON-Resistance | 9.5 | m | VGS = 4.5V, ID = 20A |
| Qg | Total Gate Charge | 34 | nC | VGS = 0 to 10V, VDS = 15V, ID = 30A |
| VSD | Forward on voltage | 1.2 | V | VGS = 0V, IS = 30A |
2509261615_XTX-BRT30N70P1_C51966739.pdf
Related Products
power control Sensata B612F-2T-YEC module for AC DC variable voltage output applications up to 15KW
Sensata B-2T, B-2 Series Power Modules The Sensata B-2T and B-2 Series Power Modules offer versatile solutions for AC or DC variable voltage output applications, capable of handling up to 15KW. These modules feature eight circuit options and are UL Recognized (E72445), providing reliable performance ...
IGBT module YANGJIE MG200HF12MIC2 offering short circuit rating and fast soft reverse recovery diodes
Product OverviewThe MG200HF12MIC2 S-M304 is a high-performance IGBT module designed for demanding applications. It features short circuit rating, low stray inductance, and low switching losses, with a VCE(sat) exhibiting a positive temperature coefficient. This module offers fast switching and a ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Durable YANGJIE MG450HF12TLC2 IGBT module featuring trench technology for motion control welding and UPS
Product OverviewThe MG450HF12TLC2 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (particularly Eoff), a positive temperature coefficient for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
