N channel MOSFET XYD X7P5N15GHT1 featuring low on resistance suitable for load switches and LED systems
Key Attributes
Model Number:
X7P5N15GHT1
Product Custom Attributes
Mfr. Part #:
X7P5N15GHT1
Package:
TOLL-1L
Product Description
X7P5N15GHT1 N-CHANNEL MOSFET
The X7P5N15GHT1 is an N-CHANNEL MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It offers extremely low on-resistance and excellent low Ciss, making it suitable for applications such as networking, load switches, LED applications, and quick charge systems.
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Product Name: X7P5N15GHT1
- Package: TOLL-1L
- Packaging: Tape and reel
Technical Specifications
| Parameter | Symbol | Values (Unit) | Note/Test Conditions |
|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 150 V | VGS=0V,ID=250A |
| Continuous Drain Current | ID | 132 A (TC=25) 83 A (TC=100) | Note 1 |
| Pulsed Drain Current | IDM | 528 A | - |
| Single Pulse Avalanche Energy | EAS | 992 mJ | L=0.5mH,VD=50V, TC=25 |
| Maximum Power Dissipation | PD | 277 W (TC=25) 2.9 W (TA=25) | - |
| Operating Junction and Storage Temperature Range | Tj,TSTG | -50 to 150 | - |
| Thermal resistance, Junction to Case | Rth(J-c) | 0.45 /W | - |
| Thermal resistance, Junction to Ambient | Rth(J-a) | 43 /W | - |
| Drain-Source On-State Resistance | RDS(on) | 6.2 to 7.5 m | VGS=10V,ID=80A |
| Gate-Source Threshold Voltage | VGS(th) | 2 to 4 V | VDS=VGS,ID=250A |
| Input Capacitance | Ciss | 6727 pF | VDS=75V,VGS=0V,f=1.0MHZ |
| Output Capacitance | Coss | 494 pF | - |
| Reverse Transfer Capacitance | Crss | 28 pF | - |
| Turn-On Delay Time | td(on) | 26 ns | VDD=75V,RG-ext=1.6, VGS=10V,ID=37.5A |
| Turn-On Rise Time | tr | 76 ns | - |
| Turn-Off Delay Time | td(off) | 91 ns | - |
| Turn-Off Fall Time | tf | 49 ns | - |
| Total Gate Charge | Qg | 137 nC | VDS=75V,ID=40A,VGS=10V |
| Gate-Source Charge | Qgs | 27 nC | - |
| Gate-Drain Charge | Qgd | 46 nC | - |
| Continuous Diode Forward Current | IS | 132 A | - |
| Pulsed Diode Forward Current | ISM | 528 A | - |
| Diode Forward Voltage | VSD | 1.2 V | IS=80A,VGS=0V |
| Reverse Recovery Time | trr | 81 ns | VGS=0V,IS=40A , di/dt=100A/s , Tj=25 |
| Reverse Recovery Charge | Qrr | 549 nC | - |
2509251450_XYD-X7P5N15GHT1_C51952930.pdf
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