Durable power MOSFET XYD X2P8N060GLV8 optimized for battery management and high current applications
Key Attributes
Model Number:
X2P8N060GLV8
Product Custom Attributes
Mfr. Part #:
X2P8N060GLV8
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The X2P8N060GLV8 is a high-performance N-channel MOSFET from Xiamen XYDFAB Integrated Circuit Co., Ltd. It features extremely low on-resistance (RDS(on)) and excellent low Ciss, making it ideal for demanding applications. This MOSFET is designed for synchronous rectification in AC/DC quick chargers, battery management systems, and Uninterruptible Power Supplies (UPS).
Product Attributes
- Brand: Xiamen XYDFAB Integrated Circuit Co., Ltd.
- Origin: China
- Model: X2P8N060GLV8
- Package: PDFN5*6
- Packaging: Tape and Reel
Technical Specifications
| Parameter | Symbol | Values | Unit | Note/Test Conditions | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | - | 60 | V | - | |
| Gate-Source Voltage | VGS | -20 | - | 20 | V | - |
| Continuous Drain Current | ID | - | 180 | A | TC=25 | |
| - | 114 | A | TC=100 | |||
| Pulsed Drain Current | IDM | - | 720 | A | - | |
| Single Pulse Avalanche Energy | EAS | - | 127 | mJ | L=0.5mH,VDS=48V | |
| Maximum Power Dissipation | PD | - | 125 | W | TC=25 | |
| - | 1.4 | W | TA=25 | |||
| Operating Junction and Storage Temperature Range | Tj,TSTG | -55 | - | 150 | - | |
| Thermal Characteristics | ||||||
| Thermal resistance, Junction to Case | Rth(J-c) | - | - | 1 | /W | - |
| Thermal resistance, Junction to Ambient | Rth(J-a) | - | - | 92 | /W | - |
| Electrical Characteristics (Tj=25,unless otherwise noted) | ||||||
| Static characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | 60 | - | - | V | VGS=0V,ID=250A |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | A | VDS=60V,VGS=0V |
| Gate-Body Leakage Current,Forward | IGSSF | - | - | 100 | nA | VGS=20V,VDS=0V |
| Gate-Body Leakage Current,Reverse | IGSSR | - | - | -100 | nA | VGS=-20V,VDS=0V |
| Gate-Source Threshold Voltage | VGS(th) | 1 | - | 2.5 | V | VDS=VGS,ID=250A |
| Drain-Source On-State Resistance | RDS(on) | - | 2.3 | 2.8 | m | VGS=10V,ID=20A |
| - | 3.1 | 4 | m | VGS=4.5V,ID=20A | ||
| Gate Resistance | Rg | - | 2 | - | VGS=0V, VDS=0V, f=1MHz | |
| Forward Transconductance | gfs | - | 55 | - | S | VDS=5V,ID=20A |
| Dynamic characteristics | ||||||
| Input Capacitance | Ciss | - | 3942 | - | pF | VDS=30V,VGS=0V,f=1MHZ |
| Output Capacitance | Coss | - | 3105 | - | pF | - |
| Reverse Transfer Capacitance | Crss | - | 344 | - | pF | - |
| Turn-On Delay Time | td(on) | - | 18 | - | ns | VDD=30V,RG=10,RG_ext=10V,ID=30A |
| Turn-On Rise Time | tr | - | 4 | - | ns | - |
| Turn-Off Delay Time | td(off) | - | 90 | - | ns | - |
| Turn-Off Fall Time | tf | - | 127 | - | ns | - |
| Gate charge characteristics | ||||||
| Total Gate Charge | Qg | - | 73 | - | nC | VDS=30V,ID=20A,VGS=10V |
| Gate-Source Charge | Qgs | - | 14 | - | nC | - |
| Gate-Drain Charge | Qg d | - | 15 | - | nC | - |
| Reverse diode | ||||||
| Continuous Diode Forward Current | IS | - | - | 180 | A | - |
| Pulsed Diode Forward Current | ISM | - | - | 720 | A | - |
| Diode Forward Voltage | VSD | - | - | 1.2 | V | IS=20A,VGS=0V |
| Reverse Recovery Time | trr | - | 96 | - | ns | VGS=0V,IS=30A,di/dt=100A/s |
| Reverse Recovery Charge | Qrr | - | 242 | - | nC | - |
2509251450_XYD-X2P8N060GLV8_C51952902.pdf
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