PNP Power Transistor YANGJIE MJD32CQ with Halogen Free Construction and Moisture Sensitivity Level 1
Key Attributes
Model Number:
MJD32CQ
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
50uA
DC Current Gain:
10@3A,4V
Transition Frequency(fT):
3MHz
Vce Saturation(VCE(sat)):
1.2V@3A,0.375A
Type:
PNP
Pd - Power Dissipation:
1.25W
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
100V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MJD32CQ
Package:
TO-252
Product Description
Product Overview
The MJD32CQ is a PNP Power Transistor designed for general purpose amplifier and low speed switching applications. It features UL-94 V-0 flammability rating, halogen-free construction, and Moisture Sensitivity Level 1. The device is AEC-Q101 qualified.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: AEC-Q101 qualified, UL-94 V-0 flammability rating, RoHS compliant
- Material: Epoxy
Technical Specifications
| Item | Symbol | Unit | Conditions | Min | Typ | Max |
| Collector-Base Voltage | VCBO | V | -100 | |||
| Collector-Emitter Voltage | VCEO | V | -100 | |||
| Emitter-Base Voltage | VEBO | V | -5 | |||
| Collector Current - Continuous | IC | A | -3 | |||
| Total Device Dissipation | PD | W | Ta=25 | 1.25 | ||
| Thermal Resistance, Junction to Ambient Air | RJA | /W | (*) Device mounted on FR-4 PCB 15 x 17 x 0.8 mm | 100 | ||
| Thermal Resistance, Junction to Mounting Base | RthJ-mb | /W | 8.3 | |||
| Junction Temperature | Tj | -55 | +150 | |||
| Storage Temperature | TSTG | -55 | +150 | |||
| Collector-base breakdown voltage | VCBO | V | IC= -1mA, IE=0 | -100 | ||
| Collector-emitter breakdown voltage | VCEO | V | IC= -30mA, IB=0 | -100 | ||
| Emitter-base breakdown voltage | VEBO | V | IE= -1mA, IC=0 | -5 | ||
| Collector-base cut-off current | ICEO | uA | VCE= -60V, IB =0 | -50 | ||
| Collector-base cut-off current | ICES | uA | VCE= -100V , VEB=0 | -20 | ||
| Emitter-base cut-off current | IEBO | mA | VEB= -5V , IC=0 | -1 | ||
| DC current gain | hFE | VCE= -4V, IC= -1A | 25 | |||
| DC current gain | hFE | VCE= -4V, IC= -3A | 10 | 75 | ||
| Collector-emitter saturation voltage | VCE(sat) | V | IC= -3A, IB= -0.375A | -1.2 | ||
| Base-emitter voltage | VBE | V | IC= -3A, VCE= -4V | -1.8 | ||
| Transition frequency | fT | MHz | VCE= 10V, IC= 0.5A, f=1KHz | 3 |
2410121531_YANGJIE-MJD32CQ_C20602014.pdf
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