High current PNP transistor XZT SS8550 featuring 1.5A collector current for general purpose electronic
Key Attributes
Model Number:
SS8550
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
DC Current Gain:
200@100mA,1V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
500mV@800mA,80mA
Type:
PNP
Pd - Power Dissipation:
300mW
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
SS8550
Package:
SOT-23
Product Description
Product Overview
The SS8550 is a PNP bipolar junction transistor (BJT) designed for general-purpose applications. It is complementary to the SS8050 NPN transistor and features a collector current of up to 1.5A. This transistor is suitable for various electronic circuits requiring amplification or switching.
Product Attributes
- Brand: XT ELECTRONICS
- Complementary to: SS8050
- Package Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Voltage | VCBO | -40 | V | |||
| Collector-Emitter Voltage | VCEO | -25 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | -1.5 | A | |||
| Collector Power Dissipation | PC | 300 | mW | |||
| Thermal Resistance Junction To Ambient | RJA | 417 | /W | |||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | +150 | |||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A, IE=0 | -40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-0.1mA, IB=0 | -25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-100A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-40V, IE=0 | -100 | nA | ||
| Collector cut-off current | ICEO | VCE=-20V, IB=0 | -100 | nA | ||
| Emitter cut-off current | IEBO | VEB=-5V, IC=0 | -100 | nA | ||
| DC current gain | hFE(1) | VCE=-1V, IC=-100mA | 120 | 400 | ||
| DC current gain | hFE(2) | VCE=-1V, IC=-800mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=-800mA, IB=-80mA | -0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=-800mA, IB=-80mA | -1.2 | V | ||
| Base-emitter voltage | VBE | VCE=-1V, IC=-10mA | -1 | V | ||
| Transition frequency | fT | VCE=-10V,IC=-50mA , f=30MHz | 100 | MHz | ||
| Collector output capacitance | Cob | VCB=-10V, IE=0, f=1MHz | 20 | pF |
2410121612_XZT-SS8550_C5805832.pdf
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