Dual transistor PNP PNP XZT BC856S in SOT 363 package suitable for integrated electronic circuits
Key Attributes
Model Number:
BC856S
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
DC Current Gain:
110@2mA,5V
Transition Frequency(fT):
100MHz
Vce Saturation(VCE(sat)):
300mV@100mA,5mA
Number:
2 PNP
Type:
PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
BC856S
Package:
SOT-363
Product Description
Product Overview
This is a Dual Transistor (PNP+PNP) in a SOT-363 package. It features two transistors within a single package, reducing component count and board space while ensuring no mutual interference between the transistors.
Product Attributes
- Brand: X T ELECTRONICS
- Website: http://www.xt-elec.com
- Package Type: SOT-363
Technical Specifications
| Parameter | Symbol | Condition | Min | Max | Unit |
| Collector-Base Voltage | V(BR)CBO | IC=-10 A, IE=0 | -80 | V | |
| Collector-Emitter Voltage | V(BR)CEO | IC=-10 mA, IB=0 | -65 | V | |
| Emitter-Base Voltage | V(BR)EBO | IE=-10 A, IC=0 | -5 | V | |
| Collector Current - Continuous | IC | -0.1 | A | ||
| Collector Power Dissipation | PC | 0.2 | W | ||
| Thermal Resistance - Junction to Ambient | RthJA | 625 | C/W | ||
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 | +150 | C | |
| Collector Cut-off Current | ICBO | VCB=-30V, IE=0 | -15 | nA | |
| Emitter Cut-off Current | IEBO | VEB=-5V, IC=0 | -100 | nA | |
| DC Current Gain | hFE | VCE=-5V, IC=-2mA | 110 | ||
| DC Current Gain | hFE | IC=-10mA, IB=-0.5mA | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | IC=-100mA, IB=-5mA | -0.3 | V | |
| Base-Emitter Saturation Voltage | VBE(sat) | IC=-10mA, IB=-0.5mA | 0.7 | V | |
| Output Capacitance | Cobo | VCB =-10V, f= 1MHz, IE = 0 | 2.5 | pF | |
| Transition Frequency | fT | VCE =-5V, IC =-10mA, f= 100MHz | 100 | MHz | |
| Pin 1 | Emitter1 | ||||
| Pin 2 | Base1 | ||||
| Pin 3 | Collector2 | ||||
| Pin 4 | Emitter2 | ||||
| Pin 5 | Base2 | ||||
| Pin 6 | Collector1 |
2410121955_XZT-BC856S_C5805837.pdf
Related Products
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Compact surface mount bridge rectifier YONGYUTAI DB157S with plated solderable leads and ABS housing
Product OverviewThis series of bridge rectifiers features glass passivated die construction, offering a low forward voltage drop and high current/surge current capabilities. Designed for surface mount applications, these rectifiers are constructed from UL 94V-0 rated plastic material. They are ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
