Durable N Channel SMD MOSFET XZT 2N7002KDW with ESD Protection and Small Signal Switching Capability
Key Attributes
Model Number:
2N7002KDW
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
5.3Ω@4.5V,200A
Gate Threshold Voltage (Vgs(th)):
2.5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF@10V
Number:
2 N-Channel
Output Capacitance(Coss):
30pF
Input Capacitance(Ciss):
40pF@10V
Pd - Power Dissipation:
150mW
Mfr. Part #:
2N7002KDW
Package:
SOT-363
Product Description
Product Overview
The XT ELECTRONICS 2N7002KDW is a N-Channel SMD MOSFET designed for high-density cell applications, offering ultra-low on-resistance. It functions as a voltage-controlled small signal switch, providing a rugged and reliable solution with high saturation current capability. This MOSFET is ESD protected and ideal for load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: XT ELECTRONICS
- Model: 2N7002KDW
- Type: N-Channel SMD MOSFET
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
| Absolute Maximum Ratings (Ta=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 340 | mA | |||
| Power Dissipation | PD | 150 | mW | |||
| Thermal Resistance Junction to Ambient | RJA | 833 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Electrical Characteristics (TA=25 oC, unless otherwise noted) | ||||||
| Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID =250A | 60 | V | ||
| Zero gate voltage drain current | IDSS | VDS =48V,VGS = 0V | 1 | A | ||
| Gate-body leakage current | IGSS | VGS =20V, VDS = 0V | 10 | A | ||
| Gate threshold voltage | VGS(th) | VDS =VGS, ID =1mA | 1.0 | 2.5 | V | |
| Drain-source on-resistance | RDS(on) | VGS =10V, ID =500A | 0.9 | 5 | ||
| Drain-source on-resistance | RDS(on) | VGS =4.5V, ID =200A | 1.1 | 5.3 | ||
| Dynamic Characteristics (2) | ||||||
| Input Capacitance | Ciss | VDS =10V,VGS =0V,f =1MHz | 40 | pF | ||
| Output Capacitance | Coss | VDS =10V,VGS =0V,f =1MHz | 30 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS =10V,VGS =0V,f =1MHz | 10 | pF | ||
| Turn-on delay time | td(on) | VDD=50V,VGS=10V, RL=250,RGEN=50 | 10 | nS | ||
| Turn-off delay time | td(off) | VDD=50V,VGS=10V, RL=250,RGEN=50 | 15 | nS | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward voltage | VSD | VGS =0V, IS=0.3A | 1.5 | V | ||
2410121828_XZT-2N7002KDW_C5805833.pdf
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