Zener diode YANGJIE BZT52B3V9SQ with AEC Q101 qualification suffix Q and UL 94 V0 flammability rating
Key Attributes
Model Number:
BZT52B3V9SQ
Product Custom Attributes
Operating Junction Temperature Range:
-55℃~+150℃
Reverse Leakage Current (Ir):
3uA@1.0V
Pd - Power Dissipation:
300mW
Impedance(Zzt):
90Ω
Diode Configuration:
1 Independent
Zener Voltage(Range):
3.82V~3.98V
Zener Voltage(Nom):
3.9V
Mfr. Part #:
BZT52B3V9SQ
Package:
SOD-323(SC-90)
Product Description
Product Overview
The BZT52B3V6SQ thru BZT52B36SQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are Moisture Sensitivity Level 1 and offer a Zener voltage range from 3.6V to 36V with approximately 2% tolerance. The series also boasts an ESD Rating of Class 3 (> 16 kV) per Human Body Model. Parts with the suffix "Q" are AEC-Q101 qualified.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Material: Epoxy casing
- Color: Black body
- Certifications: UL-94 V-0 flammability rating, Halogen free, AEC-Q101 qualified (for suffix "Q" parts)
Technical Specifications
| Type Number | Device Marking | Vz at Izt (V) | Izt (mA) | Zzt () | IR (A)@VR | VR (V) | VF (V)@IF=10mAdc | PD (mW) | Tstg (C) | TJ (C) | RthJA (C/W) |
| BZT52B3V6SQ | 2W4 | 3.6 | 5 | 90 | 0 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B3V9SQ | 2W5 | 3.9 | 5 | 90 | 0 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B4V3SQ | 2W6 | 4.3 | 5 | 90 | 0 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B4V7SQ | 2W7 | 4.7 | 5 | 80 | 0.2 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B5V1SQ | 2W8 | 5.1 | 5 | 60 | 1.2 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B5V6SQ | 2W9 | 5.6 | 5 | 40 | 2.5 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B6V2SQ | 2WA | 6.2 | 5 | 10 | 3.7 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B6V8SQ | 2WB | 6.8 | 5 | 15 | 4.5 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B7V5SQ | 2WC | 7.5 | 5 | 15 | 5.3 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B8V2SQ | 2WD | 8.2 | 5 | 15 | 6.2 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B9V1SQ | 2WE | 9.1 | 5 | 15 | 7.0 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B10SQ | WG | 10 | 5 | 20 | 8.0 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B11SQ | 2WG | 11 | 5 | 20 | 9.0 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B12SQ | WI | 12 | 5 | 25 | 10.0 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B13SQ | 2WI | 13 | 5 | 30 | 11.0 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B15SQ | WL | 15 | 5 | 30 | 13.0 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B16SQ | WM | 16 | 5 | 40 | 14.0 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B18SQ | WN | 18 | 5 | 45 | 16.0 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B20SQ | 2WM | 20 | 5 | 55 | 18.0 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B22SQ | 2WN | 22 | 5 | 55 | 20.0 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B24SQ | WR | 24 | 5 | 70 | 22.0 | 5 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B27SQ | 2WP | 27 | 2 | 80 | 25.3 | 2 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B30SQ | 2WQ | 30 | 2 | 80 | 29.4 | 2 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B33SQ | 2WR | 33 | 2 | 80 | 33.4 | 2 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
| BZT52B36SQ | 2WS | 36 | 2 | 90 | 37.4 | 2 | 0.9 | 300 | -55~+150 | -55~+150 | 415 |
2411212331_YANGJIE-BZT52B3V9SQ_C20167634.pdf
Related Products
General purpose Zener diode XZT BZT52B30 featuring planar die construction for medium current electronic
BZT52B2V4 thru BZT52B43 ZENER DIODEThe BZT52B2V4 thru BZT52B43 series is a range of Zener diodes featuring planar die construction. These diodes are designed for general purpose, medium current applications and are ideally suited for automated assembly processes. They are available in a lead-free ...
Power Field Effect Transistor XDS TX15N10B N Channel MOSFET Suitable for Battery Powered Circuits
Product DescriptionThe TX15N10B is an N-Channel logic enhancement mode power field-effect transistor utilizing high cell density, DMOS trench technology. This advanced process minimizes on-state resistance, making the device particularly suitable for low-voltage applications such as cellular phones, ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
