Low saturation voltage PNP bipolar transistor WILLSEMI WPT2E33-3TR for charging circuit applications
Key Attributes
Model Number:
WPT2E33-3/TR
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
100@1A,2V
Transition Frequency(fT):
-
Number:
1 PNP
Vce Saturation(VCE(sat)):
400mV@2A,200mA
Type:
PNP
Pd - Power Dissipation:
1.5W
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Operating Temperature:
-
Mfr. Part #:
WPT2E33-3/TR
Package:
SOT-89-3L
Product Description
Product Overview
The WPT2E33 is a single PNP bipolar power transistor from Will Semiconductor Ltd. It features a very low saturation voltage and is suitable for charging circuits and other power management applications in portable equipment. This device is Pb-free.
Product Attributes
- Brand: Will Semiconductor Ltd.
- Product Code: WPT2E33
- Certification: Pb-free
- Package: SOT-89-3L
- Marking: WPT2E33 YYWW (YY=Year, WW=Week)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Collector-emitter voltage | VCEO | -30 | V | |||
| Collector-base voltage | VCBO | -30 | V | |||
| Emitter-base voltage | VEBO | -6 | V | |||
| Continues collector current (a) | IC | -3 | A | |||
| Continues collector current (b) | IC | -2 | A | |||
| Pulse collector current (c) | ICM | -6 | A | |||
| Power dissipation (a) | PD | 3.0 | W | |||
| Power dissipation (b) | PD | 1.5 | W | |||
| Junction Temperature | TJ | 150 | C | |||
| Lead Temperature | TL | 260 | C | |||
| Storage Temperature Range | Tstg | -55 | 155 | C | ||
| Collector-emitter breakdown voltage | BVCEO | IC=-10mA, IB=0mA | -30 | V | ||
| Collector-base breakdown voltage | BVCBO | IC=-1mA, IE=0mA | -30 | V | ||
| Emitter-base breakdown voltage | BVEBO | IE=-100uA, IC=0mA | -6 | V | ||
| Collector cutoff current | ICBO | VCB=-30V | -100 | nA | ||
| Emitter cutoff current | IEBO | VEB=-5V | -100 | nA | ||
| Collector-emitter saturation voltage (c) | VCE(sat) | IC=-2A, IB=-200mA | -0.2 | -0.4 | V | |
| Base-emitter saturation voltage (c) | VBE(sat) | IC=-2A, IB=-200mA | -1.0 | -1.5 | V | |
| Base-emitter forward voltage | VBE(on) | IC=-0.5A, VCE=-2V | -0.7 | -1.0 | V | |
| DC current gain (c) | hFE | IC=-1A , VCE=-2V | 100 | 300 |
2410121453_WILLSEMI-WPT2E33-3-TR_C240199.pdf
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