Dual NPN Small Signal Transistor YANGJIE MMDT4401 SOT363 Package RoHS Compliant Epoxy UL94 V0
Key Attributes
Model Number:
MMDT4401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
100nA
DC Current Gain:
20@0.1mA,1V
Transition Frequency(fT):
250MHz
Vce Saturation(VCE(sat)):
750mV
Type:
NPN
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
MMDT4401
Package:
SOT-363
Product Description
Product Overview
The MMDT4401 is a dual NPN small signal transistor housed in a SOT-363 surface mount package. Its epoxy meets UL-94 V-0 flammability rating and it is ideally suited for automatic insertion. This device is compliant with RoHS standards.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS
Technical Specifications
| Item | Symbol | Unit | Conditions | Value |
| Collector-Base Voltage | VCBO | V | IC=100A,IE=0 | 60 |
| Collector-Emitter Voltage | VCEO | V | IC=1mA,IB=0 | 40 |
| Emitter-Base Voltage | VEBO | V | IE=100A,IC=0 | 6 |
| Collector Current -Continuous | IC | mA | 600 | |
| Total Device Dissipation | PC | mW | Ta=25 | 200 |
| Junction Temperature | Tj | 150 | ||
| Storage Temperature | TSTG | -55 to +150 | ||
| Collector-base breakdown voltage | VCBO | V | IC=100A,IE=0 | 60 |
| Collector-emitter breakdown voltage | VCEO | V | IC=1mA,IB=0 | 40 |
| Emitter-base breakdown voltage | VEBO | V | IE=100A,IC=0 | 6 |
| Collector cut-off current | ICBO | nA | VCB=50V,IE=0 | 100 |
| Collector cut-off current | ICEO | nA | VCE=35V, IB=0 | 500 |
| Emmiter cut-off current | IEBO | nA | VEB=3V, IC=0 | 100 |
| DC current gain | hFE1 | VCE=1V,IC=0.1mA | 20 | |
| DC current gain | hFE2 | VCE=1V,IC=1mA | 40 | |
| DC current gain | hFE3 | VCE=1V,IC=10mA | 80 | |
| DC current gain | hFE4 | VCE=1V,IC=150mA | 100 | |
| DC current gain | hFE5 | VCE=2V,IC=500mA | 40 | |
| Collector-emitter saturation voltage | VCE(sat) | V | IC=150mA,IB=15mA | 0.4 |
| Collector-emitter saturation voltage | VCE(sat) | V | IC=500mA,IB=50mA | 0.75 |
| Base-emitter saturation voltage | VBE(sat) | V | IC=150mA,IB=15mA | 0.95 |
| Base-emitter saturation voltage | VBE(sat) | V | IC=500mA,IB=50mA | 1.2 |
| Transition frequency | fT | MHz | VCE=10V,IC=20mA,f=100MHz | 250 |
| Delay time | td | ns | VCC=30V,IC=150mA, IB1=15mA,VBE(off)=2V | 15 |
| Rise time | tr | ns | VCC=30V,IC=150mA, IB1=- IB2=5mA | 20 |
| Storage time | ts | ns | VCC=30V,IC=150mA, IB1=- IB2=5mA | 225 |
| Fall time | tf | ns | VCC=30V,IC=150mA, IB1=- IB2=5mA | 30 |
2410121855_YANGJIE-MMDT4401_C968394.pdf
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