Amplifier YANGJIE 2SB1198-RQ PNP Type with High Conductance and Moisture Sensitivity Level One Rating
Key Attributes
Model Number:
2SB1198-RQ
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
500nA
DC Current Gain:
180@100mA,3V
Transition Frequency(fT):
180MHz
Number:
1 PNP
Vce Saturation(VCE(sat)):
500mV@500mA,50mA
Type:
PNP
Pd - Power Dissipation:
200mW
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
80V
Operating Temperature:
-55℃~+150℃
Mfr. Part #:
2SB1198-RQ
Package:
SOT-23
Product Description
2SB1198-RQ PNP General Purpose Amplifier
The 2SB1198-RQ is a PNP General Purpose Amplifier from Yangzhou Yangjie Electronic Technology Co., Ltd. It features high conductance and low VCE(sat), making it suitable for various amplification applications. The epoxy meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. The part number with suffix "Q" indicates AEC-Q101 qualification.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS Compliant, AEC-Q101 Qualified (for suffix "Q")
- Flammability Rating: UL-94 V-0
- Moisture Sensitivity Level: 1
- Halogen Free: Yes
- Case: SOT-23
- Terminals: Tin plated leads, solderable per J-STD-002 and JESD22-B102
- Marking: AKR
Technical Specifications
| Item | Symbol | Unit | Conditions | Min | Typ | Max |
| Collector-Base Voltage | VCBO | V | -80 | |||
| Collector-Emitter Voltage | VCEO | V | -80 | |||
| Emitter-Base Voltage | VEBO | V | -5 | |||
| Collector Current -Continuous | IC | mA | -500 | |||
| Total Device Dissipation | PD | mW | Ta=25 | 200 | ||
| Junction Temperature | Tj | -55 | +150 | |||
| Storage Temperature | TSTG | -55 | +150 | |||
| Collector-base breakdown voltage | VCBO | V | IC= -50uA, IE=0 | -80 | ||
| Collector-emitter breakdown voltage | VCEO | V | IC= -2mA, IB=0 | -80 | ||
| Emitter-base breakdown voltage | VEBO | V | IE= -50uA, IC=0 | -5 | ||
| Collector-base cut-off current | ICBO | uA | VCB=-50V, IE =0 | -0.5 | ||
| Emitter-base cut-off current | IEBO | uA | VEB=-4 V , IC=0 | -0.5 | ||
| DC current gain | hFE | VCE= -3V, IC= -100mA | 180 | 390 | ||
| Collector-emitter saturation voltage | VCE(sat) | V | IC=-500mA, IB= -50mA | -0.5 | ||
| Base-emitter saturation voltage | VBE(sat) | V | IC=-500mA, IB= -50mA | -1.2 | ||
| Transition frequency | fT | MHz | VCE=-10V,IC=-50mA,f=100MHz | 180 |
2408011042_YANGJIE-2SB1198-RQ_C2942448.pdf
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