N Channel Enhancement Mode Transistor YANGJIE YJG100G08A with High Density Cell Design and Low RDS
Key Attributes
Model Number:
YJG100G08A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
100A
RDS(on):
3.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
7.5pF
Number:
1 N-channel
Pd - Power Dissipation:
152W
Input Capacitance(Ciss):
5.666nF
Output Capacitance(Coss):
860pF
Gate Charge(Qg):
73nC@10V
Mfr. Part #:
YJG100G08A
Package:
PDFN-8L(5x6)
Product Description
Product Overview
The Yangzhou Yangjie Electronic Technology Co., Ltd. YJG100G08A is an N-Channel Enhancement Mode Field Effect Transistor designed for various applications. It features a split gate trench MOSFET technology, excellent heat dissipation package, and high-density cell design for low RDS(ON). This transistor is 100% EAS and VDS Tested, meeting UL 94 V-0 flammability rating and is Halogen Free. It is recommended for new designs.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJG100G08A
- Technology: N-Channel Enhancement Mode Field Effect Transistor
- Certifications: UL 94 V-0 Flammability Rating, Halogen Free, RoHS Compliant
- Moisture Sensitivity Level: 1
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 80 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | TC=25 | 100 | A | ||
| Drain Current | ID | TC=100 | 63 | A | ||
| Pulsed Drain Current | IDM | 400 | A | |||
| Avalanche energy | EAS | TJ=25, VDD=50V, VGS=10V, L=3mH Ias=20A. | 600 | mJ | ||
| Total Power Dissipation | PD | Tc=25 | 152 | W | ||
| Total Power Dissipation | PD | Tc=100 | 61 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 80 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=80V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=20A | 3.6 | 4.5 | m | |
| Diode Forward Voltage | VSD | IS=20A,VGS=0V | 0.8 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 100 | A | |||
| Gate resistance | RG | f=1MHz | 2 | |||
| Transconductance | Gfs | VDS=10V,ID=50A | 71.5 | S | ||
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=40V,VGS=0V,f=1MHZ | 5666 | pF | ||
| Output Capacitance | Coss | VDS=40V,VGS=0V,f=1MHZ | 860 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=40V,VGS=0V,f=1MHZ | 7.5 | pF | ||
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VDS=40V , VGS=10V , ID=50A | 73 | nC | ||
| Gate-Source Charge | Qgs | VDS=40V , VGS=10V , ID=50A | 25 | nC | ||
| Gate-Drain Charge | Qgd | VDS=40V , VGS=10V , ID=50A | 12 | nC | ||
| Reverse Recovery Chrage | Qrr | IF=50A , dI/dt=100A/us | 50 | nC | ||
| Reverse Recovery Time | trr | IF=50A , dI/dt=100A/us | 44 | ns | ||
| Turn-on Delay Time | tD(on) | VDS=40V , VGS=10V , RG=3, ID=50A | 27 | ns | ||
| Turn-on Rise Time | tr | VDS=40V , VGS=10V , RG=3, ID=50A | 32 | ns | ||
| Turn-off Delay Time | tD(off) | VDS=40V , VGS=10V , RG=3, ID=50A | 54 | ns | ||
| Turn-off fall Time | tf | VDS=40V , VGS=10V , RG=3, ID=50A | 17 | ns | ||
| Thermal Resistance | ||||||
| Thermal Resistance Junction-to-Ambient | RJA | D t10S | 22.3 | /W | ||
| Thermal Resistance Junction-to-Ambient | RJA | D Steady-State | 40.7 | /W | ||
| Thermal Resistance Junction-to-Case | RJC | Steady-State | 0.819 | /W | ||
2506161807_YANGJIE-YJG100G08A_C2942430.pdf
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