Built in resistor digital transistor YANGJIE UMD3N designed for surface mount and inverter circuits
Key Attributes
Model Number:
UMD3N
Product Custom Attributes
DC Current Gain:
30@5V,5mA
Current - Collector(Ic):
100mA
Output Voltage(VO(on)):
300mV
Input Resistor:
10kΩ
Resistor Ratio:
1
Pd - Power Dissipation:
150mW
Collector - Emitter Voltage VCEO:
50V
Mfr. Part #:
UMD3N
Package:
SOT-363
Product Description
Product Overview
The UMD3N is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, enabling inverter circuit designs. The epoxy meets UL-94 V-0 flammability rating and the package is ideally suited for automatic insertion.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China (implied by company location)
- Certifications: RoHS, UL-94 V-0
Technical Specifications
| Model | Item | Symbol | Unit | Conditions | Min | Typ | Max |
| DTR1-NPN | Supply Voltage | VCC | V | 50 | |||
| Input Voltage | VIN | V | -10 | +40 | |||
| Output Current | IO | mA | 100 | ||||
| Power Dissipation | PD | mW | Ta=25 | 150 | |||
| Junction Temperature | Tj | (Single) | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | ||||
| Input voltage (off) | VI(off) | V | VCC=5V,Ic=100uA | 0.5 | - | ||
| Input voltage (on) | VI(on) | V | VO=0.3V,Ic=10mA | - | 3 | ||
| Output voltage (on) | Vo(on) | V | Io /Ii =10mA/0.5 mA | - | 0.3 | ||
| Input current | II | mA | VI=5V | - | 0.88 | ||
| DTR2-PNP | Supply Voltage | VCC | V | -50 | |||
| Input Voltage | VIN | V | -40 | +10 | |||
| Output Current | IO | mA | -100 | ||||
| Power Dissipation | PD | mW | Ta=25 | 150 | |||
| Junction Temperature | Tj | 150 | |||||
| Storage Temperature | TSTG | -55 | +150 | ||||
| Input voltage (off) | VI(off) | V | VCC=-5V,Ic=-100uA | -0.5 | - | ||
| Input voltage (on) | VI(on) | V | VO=-0.3V,Ic=-10mA | - | -3 | ||
| Output voltage (on) | Vo(on) | V | Io /Ii =-10mA/-0.5 mA | - | -0.3 | ||
| Input current | II | mA | VI=-5V | - | -0.88 | ||
| Common | Output current (off) | IO(off) | uA | VCC=50V, Vi=0 (NPN) / VCC=-50V, Vi=0 (PNP) | - | 0.5 (NPN) / -0.5 (PNP) | |
| DC current gain | GI | Vo=5V, Io =5mA (NPN) / Vo=-5V, Io =-5mA (PNP) | 30 | - | - | ||
| Input resistance | R1 | k | 7 | 10 | 13 | ||
| Resistance ratio | R2/R1 | 0.8 | 1 | 1.2 | |||
| Transition frequency | fT | MHz | VCE=10V,IE=5mA,f=100MHz (NPN) / VCE=-10V,IE=-5mA,f=100MHz (PNP) | - | 250 | - |
2401111811_YANGJIE-UMD3N_C20605418.pdf
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