Low RDS ON High Speed Switching N Channel Enhancement Mode Field Effect Transistor YANGJIE YJL3404B
Key Attributes
Model Number:
YJL3404B
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.6A
RDS(on):
43mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 N-channel
Input Capacitance(Ciss):
390pF
Output Capacitance(Coss):
70pF
Pd - Power Dissipation:
1W
Gate Charge(Qg):
8.3nC@10V
Mfr. Part #:
YJL3404B
Package:
SOT-23(TO-236)
Product Description
Product Overview
The YJL3404B is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers a high-density cell design for low RDS(ON), high-speed switching, and is designed for applications such as battery protection, load switching, and power management. The device is moisture sensitivity level 1 and meets UL 94 V-0 flammability rating, with a halogen-free design.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJL3404B
- Certifications: RoHS Compliant, UL 94 V-0 Flammability Rating, Moisture Sensitivity Level 1, Halogen Free
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-source Voltage | VDS | 30 | V | |||
| Gate-source Voltage | VGS | ±20 | V | |||
| Drain Current | ID | TA=25 | 5.6 | A | ||
| Drain Current | ID | TA=100 | 3.5 | A | ||
| Pulsed Drain Current | IDM | 40 | A | |||
| Total Power Dissipation | PD | TA=25 | 1 | W | ||
| Total Power Dissipation | PD | TA=100 | 0.4 | W | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55+150 | ||||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250µA | 30 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V | - | - | 1 | µA |
| Zero Gate Voltage Drain Current | IDSS | VDS=30V, VGS=0V, Tj=150 | - | - | 100 | µA |
| Gate-Body Leakage Current | IGSS | VGS= ±20V, VDS=0V | - | - | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250µA | 1 | 1.6 | 2.2 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5.6A | - | 18 | 24 | mΩ |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=5A | - | 33 | 43 | mΩ |
| Diode Forward Voltage | VSD | IS=5.6A, VGS=0V | - | - | 1.2 | V |
| Gate resistance | RG | f=1MHz | - | 3.5 | - | Ω |
| Maximum Body-Diode Continuous Current | IS | - | - | 5.6 | A | |
| Dynamic Parameters | ||||||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | - | 390 | - | pF |
| Output Capacitance | Coss | - | 70 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 55 | - | pF | |
| Switching Parameters | ||||||
| Total Gate Charge | Qg | VGS=10V, VDS=15V, ID=5.6A | - | 8.3 | - | nC |
| Gate-Source Charge | Qgs | - | 1.5 | - | ||
| Gate-Drain Charge | Qg | - | 2.5 | - | ||
| Reverse Recovery Charge | Qrr | IF=5.6A, di/dt=175A/us | - | 6 | - | nC |
| Reverse Recovery Time | trr | - | 9 | - | ns | |
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=15V, ID=5.6A RGEN=2.2Ω | - | 5 | - | ns |
| Turn-on Rise Time | tr | - | 31 | - | ||
| Turn-off Delay Time | tD(off) | - | 13 | - | ||
| Turn-off fall Time | tf | - | 3 | - | ||
2411220012_YANGJIE-YJL3404B_C20605883.pdf
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