Heat Dissipation and Low RDS ON YANGJIE YJD60N02A N Channel Enhancement Mode Field Effect Transistor
Key Attributes
Model Number:
YJD60N02A
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
60A
Operating Temperature -:
-55℃~+175℃
RDS(on):
14mΩ@1.8V,10A
Gate Threshold Voltage (Vgs(th)):
1V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
205pF@10V
Number:
1 N-channel
Output Capacitance(Coss):
430pF
Input Capacitance(Ciss):
2.45nF@10V
Pd - Power Dissipation:
35W
Gate Charge(Qg):
65nC@4.5V
Mfr. Part #:
YJD60N02A
Package:
TO-252
Product Description
Product Overview
The YJD60N02A is a N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power LV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for high current load applications, load switching, hard switched and high frequency circuits, and uninterruptible power supply systems.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Model: YJD60N02A
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 10V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 0.4 | 0.62 | 1.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=20A | 4.5 | 6.0 | m | |
| VGS= 2.5V, ID=15A | 5.5 | 8.8 | ||||
| VGS= 1.8V, ID=10A | 8.0 | 14 | ||||
| Diode Forward Voltage | VSD | IS=20A,VGS=0V | 1.2 | V | ||
| Maximum Body-Diode Continuous Current | IS | 60 | A | |||
| Input Capacitance | Ciss | VDS=10V,VGS=0V,f=1MHZ | 2450 | pF | ||
| Output Capacitance | Coss | 430 | ||||
| Reverse Transfer Capacitance | Crss | 205 | ||||
| Total Gate Charge | Qg | VGS=4.5V,VDS=10V,ID=15A | 65 | nC | ||
| Gate-Source Charge | Qgs | 15 | ||||
| Gate-Drain Charge | Qg d | 13 | ||||
| Reverse Recovery Charge | Qrr | IF=15A, di/dt=100A/us | 39 | |||
| Reverse Recovery Time | trr | 35 | ns | |||
| Turn-on Delay Time | tD(on) | VGS=4.5V,VDD=10V, ID=10A,RL=1 RGEN=3 | 12 | |||
| Turn-on Rise Time | tr | 26 | ||||
| Turn-off Delay Time | tD(off) | 35 | ||||
| Turn-off fall Time | tf | 10 | ||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 10 | V | |||
| Drain Current | ID | TC=25 | 60 | A | ||
| TC=100 | 42 | |||||
| Pulsed Drain Current | IDM | 210 | A | |||
| Total Power Dissipation | PD | TC=25 | 35 | W | ||
| TC=100 | 18 | |||||
| Single Pulse Avalanche Energy | EAS | 195 | mJ | |||
| Thermal Resistance Junction-to-Case | RJC | 4.3 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +175 |
2410121448_YANGJIE-YJD60N02A_C699270.pdf
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