Power MOSFET YANGJIE YJG105N03A with High Density Cell Design and Low Static Drain Source Resistance
Key Attributes
Model Number:
YJG105N03A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
105A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.45mΩ@10V,20A
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
439pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
4.401nF@15V
Pd - Power Dissipation:
49W
Gate Charge(Qg):
49.5nC@10V
Mfr. Part #:
YJG105N03A
Package:
PDFN5060-8L
Product Description
Product Overview
The YJG105N03A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation due to its package design and a high-density cell design for low RDS(ON). This transistor is suitable for applications such as DC-DC Converters, Power management functions, and Backlighting.
Product Attributes
- Brand: Yangzhou Yangjie Electronic Technology Co., Ltd.
- Origin: China
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS= 0V, ID=250A | 30 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=30V,VGS=0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS= 20V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID=250A | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 10V, ID=20A | 2.45 | 3.0 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS= 4.5V, ID=15A | 2.9 | 4.0 | m | |
| Diode Forward Voltage | VSD | IS=20A,VGS=0V | 0.85 | 1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | 105 | A | |||
| Input Capacitance | Ciss | VDS=15V,VGS=0V,f=1MHZ | 4401 | pF | ||
| Output Capacitance | Coss | VDS=15V,VGS=0V,f=1MHZ | 581 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V,VGS=0V,f=1MHZ | 439 | pF | ||
| Total Gate Charge | Qg | VGS=10V,VDS=20V,ID=20A | 49.5 | nC | ||
| Gate-Source Charge | Qgs | VGS=10V,VDS=20V,ID=20A | 10.4 | |||
| Gate-Drain Charge | Qg | VGS=10V,VDS=20V,ID=20A | 8.9 | |||
| Reverse Recovery Charge | Qrr | IF=20A, di/dt=500A/us | 7.5 | |||
| Reverse Recovery Time | trr | IF=20A, di/dt=500A/us | 23 | ns | ||
| Turn-on Delay Time | tD(on) | VGS=10V, VDD=15V, ID=2A,RGEN=3 | 13 | |||
| Turn-on Rise Time | tr | VGS=10V, VDD=15V, ID=2A,RGEN=3 | 22 | |||
| Turn-off Delay Time | tD(off) | VGS=10V, VDD=15V, ID=2A,RGEN=3 | 63 | |||
| Turn-off fall Time | tf | VGS=10V, VDD=15V, ID=2A,RGEN=3 | 33 | |||
| Drain-source Voltage | VDS | 30 | V | |||
| Gate-source Voltage | VGS | 20 | V | |||
| Drain Current | ID | TC=25 | 105 | A | ||
| Drain Current | ID | TC=100 | 66 | A | ||
| Pulsed Drain Current | IDM | 415 | A | |||
| Total Power Dissipation | PD | @ TC=25 | 49 | W | ||
| Single Pulse Avalanche Energy | EAS | 507 | mJ | |||
| Junction-to-Case Thermal Resistance | RJC | 2.55 | / W | |||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | +150 |
2411220120_YANGJIE-YJG105N03A_C919572.pdf
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