High Power Gallium Nitride Wolfspeed CGHV14500P Transistor for 800 to 1600 Megahertz Radar Amplifier
Key Attributes
Model Number:
CGHV14500P
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
36A
Gate Threshold Voltage (Vgs(th)):
3V@83.6mA
Reverse Transfer Capacitance (Crss@Vds):
2.7pF
Output Capacitance(Coss):
27pF
Input Capacitance(Ciss):
295pF
Mfr. Part #:
CGHV14500P
Product Description
Product Overview
The MACOM CGHV14500 is a Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for high efficiency, high gain, and wide bandwidth capabilities. It is ideally suited for DC - 1.8 GHz L-Band radar amplifier applications, with suitability for band-specific applications ranging from 800 through 1600 MHz. The device offers 500 W typical output power and 16 dB power gain, with a typical drain efficiency of 68%. It features internal input pre-matching and an unmatched output, and is available in ceramic/metal flange and pill package types.Product Attributes
- Brand: MACOM Technology Solutions Inc.
- Material: Gallium Nitride (GaN)
- Package Types: 440117 (Ceramic/Metal Flange), 440133 (Pill Package)
- Availability: Large Signal Models available for ADS and MWO
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Units | Conditions |
|---|---|---|---|---|---|---|
| Output Power | POUT | 400 | 500 | W | VDD = 50 V, IDQ = 500 mA, PIN = 41 dBm | |
| Drain Efficiency | DE | 60 | 68 | % | VDD = 50 V, IDQ = 500 mA | |
| Power Gain | GP | 15.25 | 16.2 | dB | VDD = 50 V, IDQ = 500 mA | |
| Pulsed Amplitude Droop | D | -0.3 | dB | VDD = 50 V, IDQ = 500 mA | ||
| Gate Threshold Voltage | VGS(th) | -3.8 | -3.0 | -2.3 | VDC | VDS = 10 V, ID = 83.6 mA |
| Gate Quiescent Voltage | VGS(Q) | -2.7 | V | VDS = 50 V, ID = 500 mA | ||
| Saturated Drain Current | IDS | 54.3 | 77.7 | A | VDS = 6.0 V, VGS = 2.0 V | |
| Drain-Source Breakdown Voltage | VBR | 125 | VDC | VGS = -8 V, ID = 83.6 mA | ||
| Drain-Source Voltage | VDSS | 150 | V | 25C | ||
| Gate-to-Source Voltage | VGS | -10 | +2 | V | ||
| Storage Temperature | TSTG | -65 | +150 | C | ||
| Operating Junction Temperature | TJ | 225 | C | |||
| Maximum Drain Current | IDMAX | 36 | A | 1 | ||
| Pulsed Thermal Resistance, Junction to Case | RJC | 0.28 | C/W | PDISS = 334 W, 500 sec, 10%, 85C | ||
| Case Operating Temperature | TC | -40 | +130 | C | 5 |
2412202123_Wolfspeed-CGHV14500P_C20545723.pdf
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