IGBT YANGJIE DGW30N65CTH designed for medical applications and industrial power electronics systems
Key Attributes
Model Number:
DGW30N65CTH
Product Custom Attributes
Td(off):
80ns
Pd - Power Dissipation:
187W
Td(on):
8ns
Operating Temperature:
-40℃~+175℃
Collector-Emitter Breakdown Voltage (Vces):
650V
Reverse Transfer Capacitance (Cres):
0.05nF
Input Capacitance(Cies):
1.16nF
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
4.1V@0.43mA
Gate Charge(Qg):
0.15uC@15V
Pulsed Current- Forward(Ifm):
120A
Reverse Recovery Time(trr):
42ns
Switching Energy(Eoff):
490uJ
Turn-On Energy (Eon):
1.05mJ
Mfr. Part #:
DGW30N65CTH
Package:
TO-247
Product Description
Product Overview
The DGW30N65CTH is a high-performance IGBT designed for high frequency switching applications. It features low switching losses, a maximum junction temperature of 175, positive temperature coefficient, high ruggedness, and a high short circuit capability of 5s. This device is suitable for use in medical applications, uninterruptible power supplies, and motion/servo control systems.
Product Attributes
- Brand: Yangjie
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Maximum Ratings | ||||||
| Collector-Emitter Breakdown Voltage | VCE | 650 | V | |||
| Collector Current, limited by Tjmax | IC | TC= 25C | 60 | A | ||
| Collector Current, limited by Tjmax | IC | TC= 100C | 30 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 25C | 60 | A | ||
| Diode Forward Current, limited by Tjmax | IF | TC= 100C | 30 | A | ||
| Continuous Gate-Emitter Voltage | VGE | 20 | V | |||
| Transient Gate-Emitter Voltage | VGE | (tp10s,D<0.010) | 30 | V | ||
| Turn off Safe Operating Area | VCE650V, Tj 150C | 120 | A | |||
| Pulsed Collector Current | ICM | VGE=15V, tp limited by Tjmax | 120 | A | ||
| Diode Pulsed Current | IFpuls | tp limited by Tjmax | 120 | A | ||
| Short Circuit Withstand Time | Tsc | VGE= 15V, VCC=400VVCEM650V | 5 | s | ||
| Power Dissipation | Ptot | Tj=175C, Tc=25C | 187 | W | ||
| IGBT Discrete Features | ||||||
| Collector-Emitter Breakdown Voltage | BVCES | VGE=0V, IC=250A | 650 | - | - | V |
| Gate Threshold Voltage | VGE(th) | VGE=VCE, IC=0.43mA | 4.1 | 5.1 | 6.1 | V |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=30A, Tj=25C | 1.95 | V | ||
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=30A, Tj=125C | 2.30 | 2.40 | V | |
| Collector-Emitter Saturation Voltage | VCE(sat) | VGE=15V, IC=30A, Tj=150C | 2.40 | 2.40 | V | |
| Zero Gate Voltage Collector Current | ICES | VCE=650V, VGE=0V, Tj= 25C | 0.25 | mA | ||
| Zero Gate Voltage Collector Current | ICES | VCE=650V, VGE=0V, Tj=150C | 4.00 | mA | ||
| Gate-Emitter Leakage Current | IGES | VCE= 0V, VGE= 20V | 100 | nA | ||
| Dynamic Characteristics (IGBT) | ||||||
| Input Capacitance | Cies | VCE= 25V, VGE= 0V, f = 1MHz | 1.16 | - | nF | |
| Reverse Transfer Capacitance | Cres | 0.05 | - | nF | ||
| Gate Charge | QG | VCC=300V,IC=30A, VGE=15V | 0.15 | - | uC | |
| Short Circuit Collector Current | ISC | VGE=15V, tsc5us, Vcc=300V,Tj150C | 150 | - | A | |
| Operating Conditions | ||||||
| Operating Junction Temperature | Tj | -40 | +175 | C | ||
| Storage Temperature | Ts | -55 | +150 | C | ||
| Soldering Temperature | wave soldering 1.6mm from case for 10s | 260 | C | |||
| Electrical Characteristics of the Diode | ||||||
| Diode Forward Voltage | VF | IF= 30A, Tj= 25C | 1.90 | 2.60 | V | |
| Diode Forward Voltage | VF | IF= 30A, Tj= 125C | 1.85 | V | ||
| Diode Forward Voltage | VF | IF= 30A, Tj= 150C | 1.75 | V | ||
| Switching Characteristic, Inductive Load (Tj= 25) | ||||||
| Turn-on Delay Time | td(on) | VCC=400V, IC=30A, VGE= 0v~15V, Rg=10,Ls=60nH | 8 | - | ns | |
| Rise Time | tr | 22 | - | ns | ||
| Turn-on Energy | Eon | 1.05 | - | mJ | ||
| Turn-off Delay Time | td(off) | 80 | - | ns | ||
| Fall Time | tf | 84 | - | ns | ||
| Turn-off Energy | Eoff | 0.49 | - | mJ | ||
| Switching Characteristic, Inductive Load (Tj= 125) | ||||||
| Turn-on Delay Time | td(on) | VCC=400V, IC=30A, VGE= 0v~15V, Rg=10,Ls=60nH | 7 | - | ns | |
| Rise Time | tr | 21 | - | ns | ||
| Turn-on Energy | Eon | 1.11 | - | mJ | ||
| Turn-off Delay Time | td(off) | 86 | - | ns | ||
| Fall Time | tf | 112 | - | ns | ||
| Turn-off Energy | Eoff | 0.64 | - | mJ | ||
| Switching Characteristic, Inductive Load (Tj= 150) | ||||||
| Turn-on Delay Time | td(on) | VCC=400V, IC=30A, VGE= 0v~15V, Rg=10,Ls=60nH | 8 | - | ns | |
| Rise Time | tr | 21 | - | ns | ||
| Turn-on Energy | Eon | 1.14 | - | mJ | ||
| Turn-off Delay Time | td(off) | 90 | - | ns | ||
| Fall Time | tf | 135 | - | ns | ||
| Turn-off Energy | Eoff | 0.73 | - | mJ | ||
| Dynamic Characteristics of the Diode (Tj= 25) | ||||||
| Reverse Recovery Current | Irr | IF=30A,VR=400V di/dt= -350A/s | 7 | - | A | |
| Reverse Recovery Charge | Qrr | 0.14 | - | uC | ||
| Diode reverse recovery time | trr | 42 | - | ns | ||
| Reverse Recovery Energy | Erec | 0.09 | - | mJ | ||
| Dynamic Characteristics of the Diode (Tj= 125) | ||||||
| Reverse Recovery Current | Irr | IF=30A,VR=400V di/dt= -350A/s | 13 | - | A | |
| Reverse Recovery Charge | Qrr | 0.94 | - | uC | ||
| Diode reverse recovery time | trr | 153 | - | ns | ||
| Reverse Recovery Energy | Erec | 0.22 | - | mJ | ||
| Dynamic Characteristics of the Diode (Tj= 150) | ||||||
| Reverse Recovery Current | Irr | IF=30A,VR=400V di/dt= -350A/s | 15 | - | A | |
| Reverse Recovery Charge | Qrr | 1.26 | - | uC | ||
| Diode reverse recovery time | trr | 161 | - | ns | ||
| Reverse Recovery Energy | Erec | 0.26 | - | mJ | ||
| Thermal Resistance | ||||||
| IGBT Thermal Resistance, Junction - Case | Rth(j-c) | 0.80 | K/W | |||
| Diode Thermal Resistance, Junction - Case | Rth(j-c) | 1.4 | K/W | |||
| Thermal Resistance, Junction - Ambient | Rth(j-a) | 40 | K/W | |||
2411220011_YANGJIE-DGW30N65CTH_C20600421.pdf
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