86--136 6733 2386
quality 1200 Volt Silicon Carbide Six Pack Module Wolfspeed CCB021M12FM3 for Power Conversion Systems factory
quality 1200 Volt Silicon Carbide Six Pack Module Wolfspeed CCB021M12FM3 for Power Conversion Systems factory
quality 1200 Volt Silicon Carbide Six Pack Module Wolfspeed CCB021M12FM3 for Power Conversion Systems factory
quality 1200 Volt Silicon Carbide Six Pack Module Wolfspeed CCB021M12FM3 for Power Conversion Systems factory

1200 Volt Silicon Carbide Six Pack Module Wolfspeed CCB021M12FM3 for Power Conversion Systems

Key Attributes
Model Number: CCB021M12FM3
Product Custom Attributes
Mfr. Part #:
CCB021M12FM3
Product Description

Product Overview

The Wolfspeed CCB021M12FM3 and CCB021M12FM3T are 1200 V, 21 m Silicon Carbide Six-Pack Modules designed for high-efficiency power conversion applications. These modules offer ultra-low loss and high-frequency operation, featuring zero turn-off tail current from the MOSFET and normally-off, fail-safe device operation. They are ideal for DC-DC converters, EV chargers, high-efficiency converters/inverters, renewable energy systems, and smart-grid applications. Key system benefits include enabling compact and lightweight designs, increased system efficiency due to low switching and conduction losses of SiC, and reduced thermal requirements and system cost. An optional pre-applied thermal interface material is available.

Product Attributes

  • Brand: Wolfspeed
  • Trademarks: Wolfspeed, Wolfstreak logo
  • Material: Silicon Carbide (SiC)
  • Certifications: RoHS Compliant, REACh Compliance
  • Product Variants: CCB021M12FM3 (Without Pre-Applied TIM), CCB021M12FM3T (With Pre-Applied TIM)

Technical Specifications

Parameter Symbol Min. Typ. Max. Unit Test Conditions
Drain-Source Voltage VDS 1200 V
RDS(on) 21.0 27.9 m VGS = 15 V, ID = 30 A
Gate-Source Voltage, Maximum Value VGS max -8 +19 V Transient, < 100 ns
Gate-Source Voltage, Recommended VGS op -4 +15 V
DC Continuous Drain Current (TVJ 150 C) ID 30 A VGS = 15 V, THS = 50 C, TVJ 150 C
DC Continuous Drain Current (TVJ 175 C) ID 30 A VGS = 15 V, THS = 50 C, TVJ 175 C
DC Source-Drain Current (Body Diode) ISD BD 28 A VGS = -4 V, THS = 50 C, TVJ 175 C
Pulsed Drain Current ID (pulsed) 60 A tPmax limited by TVJmax, VGS = 15 V, THS = 50 C
Virtual Junction Temperature Operation TVJ op -40 150 C Operation
Virtual Junction Temperature Intermittent TVJ -40 175 C Intermittent with Reduced Life
Drain-Source Breakdown Voltage V(BR)DSS 1200 V VGS = 0 V, TVJ = -40 C
Gate Threshold Voltage VGS(th) 1.8 2.5 3.6 V VDS = VGS, ID = 18 mA
Zero Gate Voltage Drain Current IDSS 1 25 A VGS = 0 V, VDS = 1200 V
Gate-Source Leakage Current IGSS 10 250 nA VGS = 15 V, VDS = 0 V
Drain-Source On-State Resistance (Devices Only) RDS(on) 21.0 32.6 m VGS = 15 V, ID = 30 A, TVJ = 175 C
Transconductance gfs 26.1 S VDS = 20 V, ID = 30 A
Turn-On Switching Energy EOn 0.50 0.62 mJ TVJ = 25 C to 150 C, VDD = 600 V, ID = 30 A, VGS = -4 V/15 V, RG(OFF) = 0.0 , RG(ON) = 0.0 , L = 45.1 H
Turn-Off Switching Energy EOff 0.020 0.044 mJ TVJ = 25 C to 150 C, VDD = 600 V, ID = 30 A, VGS = -4 V/15 V, RG(OFF) = 0.0 , RG(ON) = 0.0 , L = 45.1 H
Internal Gate Resistance RG(int) 3.3 f = 100 kHz, VAC = 25 mV
Input Capacitance Ciss 4.9 nF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz
Output Capacitance Coss 209 pF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz
Reverse Transfer Capacitance Crss 16 pF VGS = 0 V, VDS = 800 V, VAC = 25 mV, f = 100 kHz
Gate to Source Charge QGS 49 nC VDS = 800 V, VGS = -4 V/15 V, ID = 40 A, Per IEC60747-8-4 pg 21
Gate to Drain Charge QGD 50 nC VDS = 800 V, VGS = -4 V/15 V, ID = 40 A, Per IEC60747-8-4 pg 21
Total Gate Charge QG 162 nC VDS = 800 V, VGS = -4 V/15 V, ID = 40 A, Per IEC60747-8-4 pg 21
FET Thermal Resistance, Junction to Heatsink Rth JHS 1.032 C/W Measured with Pre-Applied TIM
Body Diode Forward Voltage VSD 4.8 5.3 V VGS = -4 V, ISD = 30 A
Reverse Recovery Time tRR 16 ns VGS = -4 V, ISD = 30 A, VR = 600 V, di/dt = 16.0 A/ns, TVJ = 150 C
Reverse Recovery Charge QRR 1.30 C VGS = -4 V, ISD = 30 A, VR = 600 V, di/dt = 16.0 A/ns, TVJ = 150 C
Peak Reverse Recovery Current IRRM 135 A VGS = -4 V, ISD = 30 A, VR = 600 V, di/dt = 16.0 A/ns, TVJ = 150 C
Reverse Recovery Energy ERR 0.14 0.25 mJ TVJ = 25 C to 150 C, VDD = 600 V, ID = 30 A, VGS = -4 V/15 V, RG(ON) = 0.0 , L = 45.1 H
Package Resistance, M1 (High-Side) RHS 5.90 m TC = 125C, ID = 30 A
Package Resistance, M2 (Low-Side) RLS 8.10 m TC = 125C, ID = 30 A
Stray Inductance LStray 17.4 nH Between DC- and DC+, f = 10 MHz
Case Temperature TC -40 125 C
Mounting Torque MS 2.0 2.3 N-m M4 bolts
Weight W 21 g
Case Isolation Voltage Visol 3 kV AC, 50 Hz, 1 minute
Comparative Tracking Index CTI 200
Clearance Distance Terminal to Terminal 5.0 mm
Clearance Distance Terminal to Heatsink 10.0 mm
Creepage Distance Terminal to Terminal 6.3 mm
Creepage Distance Terminal to Heatsink 11.5 mm
Rated NTC Resistance RNTC 5.0 k TNTC = 25C
NTC Resistance Tolerance at 25 C R/R -5 5 % TNTC = 25C
NTC Beta Value (T2 = 50 C) 25/50 3380 K
NTC Beta Value (T2 = 80 C) 25/80 3468 K
NTC Beta Value (T2 = 100 C) 25/100 3523 K
NTC Power Dissipation Max PMax 10 mW TNTC = 25C

2411051545_Wolfspeed-CCB021M12FM3_C20544247.pdf

Related Products
quality complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities factory
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
quality Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage factory
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
quality Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction factory
Glass passivated bridge rectifier YONGYUTAI KBP310G offering 3 amp forward current and molded plastic construction
GLASS PASSIVATED BRIDGE RECTIFIERSIdeal for printed circuit board applications, these bridge rectifiers offer reliable, low-cost construction utilizing molded plastic techniques. The plastic material has a UL flammability classification of 94V-0. They are rated for reverse voltages from 50 to 1000V ...
quality Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation factory
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.