IGBT module YANGJIE MG300HF12TFC2 for motion control high frequency switching and welding applications

Key Attributes
Model Number: MG300HF12TFC2
Product Custom Attributes
Mfr. Part #:
MG300HF12TFC2
Package:
C2
Product Description

Product Overview

The MG300HF12TFC2 S-M441 is a high-performance IGBT module designed for motion/servo control, high-frequency switching applications, UPS systems, and welding machines. It features low Vce(sat) with Trench technology, low switching losses (especially Eoff), a positive temperature coefficient for Vce(sat), high short circuit capability (10s), an integrated ultra-fast & soft recovery anti-parallel FWD, and a low inductance package. The module boasts a maximum junction temperature of 175 and is RoHS compliant.

Product Attributes

  • Brand: Yangjie
  • Certifications: RoHS Compliant

Technical Specifications

ParameterSymbolConditionsValueUnit
IGBT Absolute Maximum Ratings
Collector-Emitter VoltageVCESVGE=0V, IC =1mA, Tvj=251200V
Continuous Collector CurrentICTc=100300A
Repetitive Peak Collector CurrentICRMtp=1ms600A
Gate-Emitter VoltageVGESTvj=2520V
Total Power DissipationPtotTc=25, Tvjmax=1751700W
IGBT Characteristic Values
Gate-emitter Threshold VoltageVGE(th)VGE=VCE, IC=8mA,Tvj=255.2 - 6.4V
Collector-Emitter Cut-off CurrentICESVCE=1200V,VGE=0V,Tvj=251.0mA
Collector-Emitter Saturation VoltageVCE(sat)Ic=300A,VGE=15V, Tvj=252.25 - 2.70V
Collector-Emitter Saturation VoltageVCE(sat)Ic=300A,VGE=15V, Tvj=1252.55V
Gate ChargeQG2.3uC
Input CapacitanceCiesVCE=25V,VGE =0V, f=1MHz,Tvj=2514.2nF
Reverse Transfer CapacitanceCres0.8nF
Gate-Emitter leakage currentIGESVCE=0 V, VGE=20V,Tvj = 25400nA
Turn-on Delay Timetd(on)IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=25143ns
Rise TimetrIC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=2532ns
Turn-off Delay Timetd(off)IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=25406ns
Fall TimetfIC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=2597ns
Energy Dissipation During Turn-on TimeEonIC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=2513.4mJ
Energy Dissipation During Turn-off TimeEoffIC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=2514.7mJ
Turn-on Delay Timetd(on)IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=125167ns
Rise TimetrIC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=12539ns
Turn-off Delay Timetd(off)IC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=125463ns
Fall TimetfIC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=125154ns
Energy Dissipation During Turn-on TimeEonIC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=12519.2mJ
Energy Dissipation During Turn-off TimeEoffIC=300 A, VCE=600 V, VGE= 15V, RG=1.8, Tvj=12522.4mJ
SC DataIscTp10us, VGE=15V, Tvj=150, Vcc=600V, VCEM1200V1400A
Diode Absolute Maximum Ratings
Repetitive Peak Reverse VoltageVRRMTvj=251200V
Continuous DC Forward CurrentIF300A
Repetitive Peak Forward CurrentIFRMtp=1ms600A
Diode Characteristic Values
Forward VoltageVFIF=300A,Tvj=252.10V
Forward VoltageVFIF=300A,Tvj=1252.15V
Recovered ChargeQrrIF=300 A, VR=600V, -diF/dt=6500A/us, Tvj=2528uC
Peak Reverse Recovery CurrentIrrIF=300 A, VR=600V, -diF/dt=6500A/us, Tvj=25355A
Reverse Recovery EnergyErecIF=300 A, VR=600V, -diF/dt=6500A/us, Tvj=2514.5mJ
Recovered ChargeQrrIF=300 A, VR=600V, -diF/dt=6500A/us, Tvj=12547uC
Peak Reverse Recovery CurrentIrrIF=300 A, VR=600V, -diF/dt=6500A/us, Tvj=125394A
Reverse Recovery EnergyErecIF=300 A, VR=600V, -diF/dt=6500A/us, Tvj=12521.5mJ
Module Characteristics
Isolation voltageVisolt=1min,f=50Hz2500V
Maximum Junction TemperatureTjmax175
Operating Junction TemperatureTvj op-40 - 150
Storage TemperatureTstg-40 - 125
Thermal Resistance Junction-to Case (per IGBT)RJC0.09K/W
Thermal Resistance Junction-to Case (per Diode)RJC0.14K/W
Thermal Resistance Case-to SinkRCSConductive grease applied0.035K/W
Module Electrodes TorqueMtRecommended(M6)3.0 - 5.0Nm
Module-to-Sink TorqueMsRecommended(M6)3.0 - 5.0Nm
Weight of ModuleG315g

2411220012_YANGJIE-MG300HF12TFC2_C20602004.pdf

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