SOT23 packaged YTL PBSS4140T NPN transistor with 40V breakdown voltage and 100MHz transition frequency
Key Attributes
Model Number:
PBSS4140T
Product Custom Attributes
Mfr. Part #:
PBSS4140T
Package:
SOT-23-3
Product Description
Product Overview
The PBSS4140T is an NPN transistor in a SOT-23 package, designed for general-purpose amplification and switching applications. It offers a breakdown voltage of 40V (Collector-Base) and 25V (Collector-Emitter), with a continuous collector current of up to 1.2A and a power dissipation of 0.3W. This device provides a DC current gain (hFE) of up to 350 at 100mA and 100MHz transition frequency.
Product Attributes
- Package Type: SOT-23
- Transistor Type: NPN
Technical Specifications
| Parameter | Symbol | Test Conditions | MIN | TYP | MAX | UNIT |
| Collector-base breakdown voltage | V(BR)CBO | IC= 100A, IE=0 | 40 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC= 0.1mA, IB=0 | 25 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=100A, IC=0 | 5 | V | ||
| Collector cut-off current | ICBO | VCB=40V, IE=0 | 0.1 | A | ||
| Collector cut-off current | ICEO | VCB=20V, IE=0 | 0.1 | A | ||
| Emitter cut-off current | IEBO | VEB= 5V, IC=0 | 0.1 | A | ||
| DC current gain | hFE(1) | VCE=1V, IC= 100mA | 200 | 350 | ||
| DC current gain | hFE(2) | VCE=1V, IC= 800mA | 40 | |||
| Collector-emitter saturation voltage | VCE(sat) | IC=800mA, IB= 80mA | 0.5 | V | ||
| Base-emitter saturation voltage | VBE(sat) | IC=800mA, IB= 80mA | 1.2 | V | ||
| Transition frequency | fT | VCE=10V, IC= 50mA, f=30MHz | 100 | MHz | ||
| Collector-Base Voltage | VCBO | 40 | V | |||
| Collector-Emitter Voltage | VCEO | 25 | V | |||
| Emitter-Base Voltage | VEBO | 5 | V | |||
| Collector Current -Continuous | IC | 1.2 | A | |||
| Collector Power Dissipation | PC | 0.3 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 |
2511281600_YTL-PBSS4140T_C53059516.pdf
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