Silicon N Channel Power Transistor XCH XCH13N50F with 500V Drain to Source Voltage and TO 220F Package
Key Attributes
Model Number:
XCH13N50F
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
550mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
17pF
Number:
1 N-channel
Output Capacitance(Coss):
155pF
Pd - Power Dissipation:
48W
Input Capacitance(Ciss):
1.67nF
Gate Charge(Qg):
-
Mfr. Part #:
XCH13N50F
Package:
TO-220F
Product Description
Product Overview
The XCH13N50F is a silicon N-channel Enhanced VDMOSFET manufactured using self-aligned planar technology. This design minimizes conduction losses, enhances switching performance, and improves avalanche energy. It is suitable for various power switching circuits, contributing to system miniaturization and increased efficiency. The device comes in a RoHS-compliant TO-220F package.
Product Attributes
- Brand: XCH
- Material: Silicon N-Channel
- Package: TO-220F
- Certifications: RoHS standard
Technical Specifications
| Symbol | Parameter | Test Conditions | Rating | Units |
| VDSS | Drain-to-Source Voltage | 500 | V | |
| ID | Continuous Drain Current | 13 | A | |
| IDM | Pulsed Drain Current | 52 | A | |
| VGS | Gate-to-Source Voltage | ±30 | V | |
| EAS | Single Pulse Avalanche Energy | L=10mH, ID=13A, Start TJ=25 | 900 | mJ |
| PD | Power Dissipation | TC=25 | 48 | W |
| TJ, Tstg | Operating Junction and Storage Temperature Range | -55 to 150 | ||
| TL | Maximum Temperature for Soldering | 300 | ||
| RJC | Thermal Resistance, Junction-to-Case | 2.6 | /W | |
| RJA | Thermal Resistance, Junction-to-Ambient | 100 | /W | |
| BVDSS | Drain to Source Breakdown Voltage | VGS=0V,ID=250A | 500 | V |
| IDSS | Drain to Source Leakage Current | VDS=500V, VGS=0V,Ta=25 | 1.0 | µA |
| IGSS(F) | Gate to Source Forward Leakage | VGS=+30V | 100 | nA |
| IGSS(R) | Gate to Source Reverse Leakage | VGS=-30V | -100 | nA |
| RDS(ON) | Drain-to-Source On-Resistance | VGS=10V,ID=6.5A | 0.55 | Ω |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 4.0 | V |
| gfs | Forward Trans conductance | VDS=30V,ID=13A | 15 | S |
| Ciss | Input Capacitance | VGS=0V VDS=25V f=1.0MHz | 1670 | pF |
| Coss | Output Capacitance | 155 | pF | |
| Crss | Reverse Transfer Capacitance | 17 | pF | |
| td(ON) | Turn-on Delay Time | ID=10A,VDD=250V VGS=13V,Rg=6.1Ω | 12 | ns |
| tr | Rise Time | 21 | ns | |
| td(OFF) | Turn-Off Delay Time | 38 | ns | |
| tf | Fall Time | 30 | ns | |
| Qg | Total Gate Charge | ID=13A,VDD=250V VGS=10V | 31 | nC |
| Qgs | Gate to Source Charge | 8.6 | nC | |
| Qgd | Gate to Drain (Miller)Charge | 10 | nC | |
| ISD | Continuous Source Current (Body Diode) | 13 | A | |
| ISM | Maximum Pulsed Current (Body Diode) | 52 | A | |
| VSD | Diode Forward Voltage | IS=13A,VGS=0V | 1.5 | V |
| trr | Reverse Recovery Time | IS=13A,Tj=25 dIF/dt=100A/μs,VGS=0V | 460 | ns |
| Qrr | Reverse Recovery Charge | 2.6 | μC |
2312160132_XCH-XCH13N50F_C19712039.pdf
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