High cell density trench MOSFET XCH XCH2301 with excellent switching performance and low gate charge
Key Attributes
Model Number:
XCH2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
RDS(on):
95mΩ@4.5V,2A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
25pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
185pF@10V
Pd - Power Dissipation:
800mW
Gate Charge(Qg):
2.2nC@4.5V
Mfr. Part #:
XCH2301
Package:
SOT-23
Product Description
Product Overview
The XCH2301 is a high cell density trenched P-channel MOSFET designed for efficient performance in small power switching and load switch applications. It offers excellent RDS(on) and efficiency, featuring fast switching capabilities, super low gate charge, and excellent Cdv/dt effect decline due to its advanced high cell density trench technology. This device meets RoHS and Green Product requirements with full function reliability approval.
Product Attributes
- Brand: XCH
- Type: P-Ch MOSFET
- Certifications: RoHS, Green Device Available
Technical Specifications
| Parameter | Symbol | Condition | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V,ID= -250A | -20 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = -20V, VGS = 0V | - | - | -1 | A |
| Gate to Body Leakage Current | IGSS | VDS =0V, VGS = 12V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS= VGS, ID= -250A | -0.4 | -0.7 | -1.0 | V |
| Static Drain-Source on-Resistance | RDS(on) | VGS =-4.5V, ID =-2A | - | 95 | 125 | m |
| Static Drain-Source on-Resistance | RDS(on) | VGS =-2.5V, ID =-1A | - | 135 | 190 | m |
| Input Capacitance | Ciss | VDS = -10V, VGS = 0V, f = 1.0MHz | - | 185 | - | pF |
| Output Capacitance | Coss | VDS = -10V, VGS = 0V, f = 1.0MHz | - | 35 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS = -10V, VGS = 0V, f = 1.0MHz | - | 25 | - | pF |
| Total Gate Charge | Qg | VDS = -10V, ID = -2A, VGS = -4.5V | - | 2.2 | - | nC |
| Gate-Source Charge | Qgs | VDS = -10V, ID = -2A, VGS = -4.5V | - | 0.5 | - | nC |
| Gate-Drain(Miller) Charge | Qgd | VDS = -10V, ID = -2A, VGS = -4.5V | - | 0.5 | - | nC |
| Turn-on Delay Time | td(on) | VDD = -10V, RL=5, RGEN=3,VGS=-4.5V | - | 10 | - | ns |
| Turn-on Rise Time | tr | VDD = -10V, RL=5, RGEN=3,VGS=-4.5V | - | 30 | - | ns |
| Turn-off Delay Time | td(off) | VDD = -10V, RL=5, RGEN=3,VGS=-4.5V | - | 63 | - | ns |
| Turn-off Fall Time | tf | VDD = -10V, RL=5, RGEN=3,VGS=-4.5V | - | 50 | - | ns |
| Maximum Continuous Drain to Source Diode Forward Current | IS | - | - | - | -2 | A |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | - | - | - | -8 | A |
| Drain to Source Diode Forward Voltage | VSD | VGS = 0V, IS = -2A | - | - | -1.2 | V |
2312160132_XCH-XCH2301_C7441478.pdf
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