Durable MOSFET XNRUSEMI XR7N50FR with 360 millijoule avalanche energy and 7A avalanche current rating
Key Attributes
Model Number:
XR7N50FR
Product Custom Attributes
Mfr. Part #:
XR7N50FR
Package:
TO-252-3L
Product Description
Product Overview
The XR7N50FR is an Advanced VD N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(ON) and gate charge characteristics, meeting RoHS and Green Product requirements. This MOSFET is 100% EAS guaranteed with full function reliability approval.
Product Attributes
- Brand: power-mos.com
- Certifications: RoHS, Green Device Available
- EAS Guaranteed: 100%
Technical Specifications
| Part Number | BVDSS (V) | RDS(ON) () | ID (A) | Package |
| XR7N50FR | 500 | 1.1 | 7 | TO252-3L |
Absolute Maximum Ratings
| Symbol | Parameter | Rating | Units |
| VDS | Drain-Source Voltage | 500 | V |
| VGS | Gate-Source Voltage | 30 | V |
| ID@TC=25 | Continuous Drain Current, VGS @ 10V | 7 | A |
| ID@TC=100 | Continuous Drain Current, VGS @ 10V | 4.6 | A |
| IDM | Pulsed Drain Current | 28 | A |
| EAS | Single Pulse Avalanche Energy | 360 | mJ |
| IAS | Avalanche Current | 7 | A |
| PD@TC=25 | Total Power Dissipation | 79 | W |
| TSTG | Storage Temperature Range | -55 to 150 | |
| TJ | Operating Junction Temperature Range | -55 to 150 |
Thermal Data
| Symbol | Parameter | Typ. | Max. | Unit |
| RJA | Thermal Resistance Junction-Ambient | --- | 62.5 | /W |
| RJC | Thermal Resistance Junction-Case | --- | 1.58 | /W |
Electrical Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-Source Breakdown Voltage | VGS=0V , ID=250uA | 500 | --- | --- | V |
| BVDSS/TJ | BVDSS Temperature Coefficient | Reference to 25, ID=1mA | --- | 6 | --- | V/ |
| RDS(ON) | Static Drain-Source On-Resistance | VGS=10V , ID=20A | --- | 1.1 | --- | |
| VGS(th) | Gate Threshold Voltage | VGS=VDS , ID =250uA | 3 | --- | 5 | V |
| IDSS | Drain-Source Leakage Current | VDS=500V , VGS=0V , TJ=25 | --- | --- | 1 | uA |
| IDSS | Drain-Source Leakage Current | VDS=400V, VGS=0V , TJ=100 | --- | --- | 100 | uA |
| IGSS | Gate-Source Leakage Current | VGS=20V , VDS=0V | --- | --- | 100 | nA |
| gfs | Forward Transconductance | VDS=15V , ID=3.5A | --- | 3.5 | --- | S |
| Rg | Gate Resistance | VDS=0V , VGS=0V , f=1MHz | --- | 1.1 | --- | |
| Qg | Total Gate Charge | VDS=50V , VGS=10V , ID=7A | --- | --- | 556 | nC |
| Qgs | Gate-Source Charge | --- | --- | 79 | --- | nC |
| Qgd | Gate-Drain Charge | --- | --- | 14 | --- | nC |
| Td(on) | Turn-On Delay Time | VGS=10V, VDD=250V, RG=25, ID=7A | --- | 14 | --- | ns |
| Tr | Rise Time | --- | --- | 3.9 | --- | ns |
| Td(off) | Turn-Off Delay Time | --- | --- | 7.1 | --- | ns |
| Tf | Fall Time | --- | --- | 22 | --- | ns |
| Ciss | Input Capacitance | VDS=25V , VGS=0V , f=1MHz | --- | 556 | --- | pF |
| Coss | Output Capacitance | --- | --- | 79 | --- | pF |
| Crss | Reverse Transfer Capacitance | --- | --- | 14 | --- | pF |
Diode Characteristics
| Symbol | Parameter | Conditions | Min. | Typ. | Max. | Unit |
| IS | Continuous Source Current | VG=VD=0V , Force Current | --- | --- | 7 | A |
| VSD | Diode Forward Voltage | VGS=0V , IS=20A , TJ=25C | --- | --- | 1.4 | V |
| trr | Reverse Recovery Time | IF=5A , di/dt=100A/ s , TJ=25C | --- | 108 | --- | nS |
| Qrr | Reverse Recovery Charge | --- | --- | 295 | --- | nC |
2512010948_XNRUSEMI-XR7N50FR_C42457160.pdf
Related Products
digital transistor YANGJIE DTA114YE featuring built in resistors designed for automatic insertion and halogen free
Digital Transistors (Built-in Resistors)The DTA114YE is a digital transistor with built-in resistors, designed for surface mount applications and ideally suited for automatic insertion. It offers moisture sensitivity level 1 and is halogen-free, making it a reliable choice for various electronic ...
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Low Reverse Leakage Current Schottky Diode ZHIDE SS54B for High Temperature Soldering Applications
Product OverviewThe SS52B-SS520B series are surface-mounted Schottky barrier rectifiers designed for high reliability applications. They feature low reverse leakage current, high forward surge capability, and are guaranteed for high-temperature soldering. These diodes are RoHS compliant and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
